Fabrication of Stable Amorphous Silicon

以改进非晶硅（a-Si: H）为目的，由6位专家进行了国际合作研究；3个美国人和3个日本人。我们大致上将我们的角色分为两类；(1) a-Si: H的制备；(2)薄膜和器件的光电性能表征。日本研究小组由j。汉娜，a . matuda博士和我把注意力主要集中在制造过程上。另一方面，美国的研究团队对薄膜和器件的表征进行了研究。东京工业大学的研究小组成功开发了一种名为“化学退火”的新技术，可以制造出1.8-2.1 eV的稳定的a- si: H。此外，通过原位椭偏仪测量表面，定量分析了原子氢渗透导致硅网弛豫的过程。matsuda博士领导的ETL小组提出了一个可靠的生长动力学模型，更多的是由于生长表面的反应导致的缺陷积累，这为制造高质量的a- si提供了一些有效的方法，命名为PADS和DREP。wagner教授领导的普林斯顿大学小组进行了系统的研究，揭示了光诱导缺陷的动力学和光诱导退火效应。因此，他们得出结论，饱和状态下的缺陷密度是由在黑暗和光明照明下产生和退火之间的平衡决定的。最后，由wronski教授领导的宾夕法尼亚州立大学小组一直在研究制备更稳定的宽带隙太阳能电池的方法，并开发适合这些宽隙材料的太阳能电池设计。他们尝试使用“化学退火”制备的稳定的a-Si: H。此外，宾夕法尼亚州立大学的研究小组通过椭偏光谱法清楚地确定了原子氢渗透引起的结构弛豫。这些分析所得的证据为“化学退火”促进结构弛豫提供了有力的支持。少

An International collaborative study for the aim of improvement of amorphous silicon (a-Si : H) has been carried out by six experts ; 3 American and 3 Japanese. We have roughly distinguished our roles into two ; (1) fabrication of a-Si : H and (2) characterization of the optoelectrical properties of the films and devices.Japanese research teams directed by Prof.J.Hanna, Dr.A.Matuda and myself have mainly focused our attentions to the fabrication processes. The research teams in US,on the other hand, have performed the study on the characterization of films and devices.The group of Tokyo Institute of Technology developed successfully a novel technique called "Chemical Annealing" to fabricate stable a-Si : H with the gaps of 1.8-2.1 eV.In addition, the relaxation process of Si-network induced by permeation of atomic hydrogen was quantitatively analyzed by measuring the surface with an in situ ellipsometry. The ETL group directed by Dr.Matsuda proposed an reliable model of growth kinetics … More for accumulation of defects resulting from the reactions at the growing surface, which indicated some efficient ways given the names PADS and DREP for fabrication of high quality a-Si : H.Princeton Univ.group directed by Prof.Wagner performed a systematic study to reveal the kinetics of light induced defects together with the light-induced annealing effect for a-Si : H.Consequently, they concluded the defects density at the saturated state were ruled by the balance between the generation and anneal out in either dark and light illumination. Finally, Penn State group directed by Prof.Wronski have been examining ways to prepare more stable wide band gap solar cells and developing solar cells designs appropriate for these wide gap materials. They attempted to employ the stable a-Si : H fabricated by " Chemical Annealing". In addition, Penn State group established clearly the structural relaxation induced by permeation of atomic hydrogen by their Spectroscopic Ellipsometry. The evidences obtained by these analysis offered a strong support to the "Chemical Annealing" for promotion of structural relaxation. Less