Fabrication of Stable Amorphous Silicon

稳定非晶硅的制备

• 批准号: 05044084
• 负责人: SHIMIZU Isamu
• 金额: $ 3.84万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05044084/
• 关键词: a-Si : H; Staebler-Wronski Effect; Chemical Annealing; Charged Defects; Light-induced Degradation; Thin Film; Plasma; アモルファス・シリコン; 安定性; プラズマCVD

An International collaborative study for the aim of improvement of amorphous silicon (a-Si : H) has been carried out by six experts ; 3 American and 3 Japanese. We have roughly distinguished our roles into two ; (1) fabrication of a-Si : H and (2) characterization of the optoelectrical properties of the films and devices.Japanese research teams directed by Prof.J.Hanna, Dr.A.Matuda and myself have mainly focused our attentions to the fabrication processes. The research teams in US,on the other hand, have performed the study on the characterization of films and devices.The group of Tokyo Institute of Technology developed successfully a novel technique called "Chemical Annealing" to fabricate stable a-Si : H with the gaps of 1.8-2.1 eV.In addition, the relaxation process of Si-network induced by permeation of atomic hydrogen was quantitatively analyzed by measuring the surface with an in situ ellipsometry. The ETL group directed by Dr.Matsuda proposed an reliable model of growth kinetics … More for accumulation of defects resulting from the reactions at the growing surface, which indicated some efficient ways given the names PADS and DREP for fabrication of high quality a-Si : H.Princeton Univ.group directed by Prof.Wagner performed a systematic study to reveal the kinetics of light induced defects together with the light-induced annealing effect for a-Si : H.Consequently, they concluded the defects density at the saturated state were ruled by the balance between the generation and anneal out in either dark and light illumination. Finally, Penn State group directed by Prof.Wronski have been examining ways to prepare more stable wide band gap solar cells and developing solar cells designs appropriate for these wide gap materials. They attempted to employ the stable a-Si : H fabricated by " Chemical Annealing". In addition, Penn State group established clearly the structural relaxation induced by permeation of atomic hydrogen by their Spectroscopic Ellipsometry. The evidences obtained by these analysis offered a strong support to the "Chemical Annealing" for promotion of structural relaxation. Less

一项旨在改善非晶硅（a-Si：H）的国际合作研究由六位专家进行;三位美国人和三位日本人。我们的任务大致分为两个：（1）a-Si：H的制备和（2）薄膜和器件光电性能的表征。由J.Hanna教授、A.Matuda博士和我本人领导的日本研究小组主要关注制备过程。另一方面，美国的研究小组已经进行了薄膜和器件特性的研究。东京工业大学的研究小组成功地开发了一种称为“化学退火”的新技术，以制造稳定的a-Si：H，带隙为1.8- 2.1eV。此外，用原位椭偏仪测量了硅网络的表面，定量分析了氢原子渗透引起的硅网络弛豫过程。Matsuda博士领导的ETL小组提出了一个可靠的生长动力学模型 ...更多信息 对于由生长表面处的反应产生的缺陷的积累，这表明了用于制造高质量a-Si的一些有效的方法，给出了PADS和DREP的名称：由瓦格纳教授指导的H.Princeton Univ.group进行了系统的研究，以揭示a-Si的光诱导缺陷的动力学以及光诱导退火效应：因此，他们得出结论，饱和状态下的缺陷密度由在黑暗和光照下产生和退火之间的平衡决定。最后，由Wronski教授领导的宾夕法尼亚州立大学小组一直在研究制备更稳定的宽带隙太阳能电池的方法，并开发适合这些宽带隙材料的太阳能电池设计。他们尝试使用通过“化学退火”制造的稳定的a-Si：H。此外，宾夕法尼亚州立大学的研究小组还利用椭圆偏振光谱仪明确地建立了氢原子渗透引起的结构弛豫。这些分析为“化学退火”促进结构弛豫提供了有力的支持。少

项目成果

K.Nakamura, K.Yoshino and I.Shimizu: "Fabrication of High Quality a-Si : H by Chemical Annealing" Proc.12th Symp.on Plasma Process.453-456 (1995)

K.Nakamura、K.Yoshino 和 I.Shimizu：“通过化学退火制造高质量非晶硅：H”Proc.12th Symp.on Plasma Process.453-456 (1995)

K.Nakamura,K.Yoshino,S.Takeoka and I.Shimizu: "Roles of Atomic Hydrogen in Chemical Annealing" Jpn.J.Appl.Phys.34. 442-449 (1995)

K.Nakamura、K.Yoshino、S.Takeoka 和 I.Shimizu：“原子氢在化学退火中的作用”Jpn.J.Appl.Phys.34。

H.Gleskova, M.Nakata and S.Wagner: "Comparison of Dark and Light-Induced Annealing of Metastable Defects in a-Si : H" M.R.S.Symp.Proc.336. 245-249 (1994)

H.Gleskova、M.Nakata 和 S.Wagner：“a-Si 亚稳态缺陷的暗和光诱导退火的比较：H”M.R.S.Symp.Proc.336。

G.Ganguly, H.Nishio and A.Matsuda: "Reduction of the Defect Density in Hydrogenated Amorphous Silicon by Thermally Energized Growth Precursors" Appl.Phys.Lett.64. 3581-3583 (1994)

G.Ganguly、H.Nishio 和 A.Matsuda：“通过热能生长前体降低氢化非晶硅中的缺陷密度”Appl.Phys.Lett.64。

M.Azuma,T.Yokoi,H.Ishida,J.Kocka and I.Shimizu: "Fabrication of highly stable a-Si:H from halogenous silane" Proc.Int.Conf.on Reactive Plasma. 89-94 (1994)

M.Azuma、T.Yokoi、H.Ishida、J.Kocka 和 I.Shimizu：“从含卤硅烷制备高度稳定的 a-Si:H”Proc.Int.Conf.on 反应等离子体。