Structure control of semiconductor hetero-ineterfaces utilizing 'hydrogen atom' as mediators

本工作侧重于新技术的发展，以准备高质量的半导体材料与氢原子的辅助。在我们先前的研究中，它证实了由等离子体附着在半导体上的结构和特性上的高通量氢原子，如锌（S，Se）和聚晶体硅，我们制造了一个VHF等离子体CVD设备，其中有两个沉积室连接的门阀通过一种实验的方式来调查该方法，准备高质量的半导体及其异质接口。We confirmed that high quality， high crystallinity polycrystalline silicon （poly-Si） could be prepared on glass at temper\lower than 400℃ by using SiFイイD24イイD2 andイD22イエD2 mixing gas。这应该被注意到，一个有趣的结果是：是，orientation structure of poly-Si were controlled by selecting appropriate SiFイイD24イエD2/イイD22イエD2 gas ratio ：i.e.，（220） orietated poly-Si were grown at small SiF-D24-D2/H-D22-D ... More 2 ratio conditions while （400）？ented poly-Si were grown at larger SiF？D24？D2？os。特别是，在低温下玻璃上（400）导向的（400）聚硅准备好了玻璃< 400 ° C在这项研究中有非常不同的物体，并展示了非常优秀的结构和运输性能。这些特性让我们期待着（400）型取向的聚硅被赋予高速TFTs的材料。此外，它还证实了较高的晶体片段（83%）聚硅在较低的温度下准备了>150 ° C和很小的SiHI-D24-D2的源气体有效地增加了增长率，通过促进气体反应在等离子体中的增长机制进行了调查，我们在增长率、薄膜结构中获得了详细的关系。SiFイD24エD2/HイD22エD2 ratio and growth temperature。它发现了一个非常敏感的表面增长，但在沉积条件下（400）定向的聚硅生长的地方：特别是，沉积前体对粘在Si 100表面上有非常强的选择性。此外，对特定的晶体平面的选择性蚀刻也可以在这种情况下观察到。这些结果表明，（400）偏好增长是由预测剂之间的选择性标记和特定计划的选择性标记之间的平衡来确定的。Less（低）

This work focused on the development of new technique to prepare high quality semiconductor materials with the assistance of hydrogen atoms. In our previous studies, it was confirmed that high flux hydrogen atoms generated by plasma affected on structure and property of semiconductors such as II-VI compound Zn(S,Se) and polycrystalline silicon.We made a VHF plasma CVD apparatus which had two deposition chambers connected with a gate-valve by way of an experiment to investigate the way to prepare high quality semiconductors and their hetero-interfaces. We confirmed that high quality, high crystallinity polycrystalline silicon (poly-Si) could be prepared on glass at temperatures lower than 400℃ by using SiFィイD24ィエD2 and HィイD22ィエD2 mixing gas. It should be noted that an interesting result was obtained : i.e., orientation structure of poly-Si were controlled by selecting appropriate SiFィイD24ィエD2/HィイD22ィエD2 gas ratio : i.e., (220) orietated poly-Si were grown at small SiFィイD24ィエD2/HィイD22ィエD … More 2 ratio conditions while (400) oriented poly-Si were grown at larger SiFィイD24ィエD2/HィイD22ィエD2 ratios. Especially, the preparation of (400) oriented poly-Si on glass at low temperatures < 400℃ has been very difficult subject until this study and they showed very excellent structural and transport properties. These features let us expect that the (400) oriented poly-Si are promising materials for high operation speed TFTs. Also it was confirmed that rather high crystal fraction (83%) poly-Si were prepared at rather low temperatures of >150℃ and very small addition of SiHィイD24ィエD2 to source gas effectively increased growth rate by promoting gaseous reaction in plasma.From the investigation for growth mechanism of these preferentially oriented poly-Si, we obtained detailed relationship between growth rate, film structure, SiFィイD24ィエD2/HィイD22ィエD2 ratio and growth temperature. It was found that very surface sensitive growth is occurred under the deposition condition Where (400) oriented poly-Si are grown : especially, deposition precursors have very strong selectivity for sticking to Si 100 surface. Also selective etching of specific crystallographic plane was observed at near this condition. These results indicate that (400) preferential growth is determined by the balance between selective sticking of precursors and selective etching of specific planes. Less