权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Structure control of semiconductor hetero-ineterfaces utilizing 'hydrogen atom' as mediators

利用“氢原子”作为介体的半导体异质界面的结构控制

基本信息

批准号：
09305002
负责人：
SHIMIZU Isamu
金额：
$ 19.78万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

项目摘要

This work focused on the development of new technique to prepare high quality semiconductor materials with the assistance of hydrogen atoms. In our previous studies, it was confirmed that high flux hydrogen atoms generated by plasma affected on structure and property of semiconductors such as II-VI compound Zn(S,Se) and polycrystalline silicon.We made a VHF plasma CVD apparatus which had two deposition chambers connected with a gate-valve by way of an experiment to investigate the way to prepare high quality semiconductors and their hetero-interfaces. We confirmed that high quality, high crystallinity polycrystalline silicon (poly-Si) could be prepared on glass at temperatures lower than 400℃ by using SiFィイD24ィエD2 and HィイD22ィエD2 mixing gas. It should be noted that an interesting result was obtained : i.e., orientation structure of poly-Si were controlled by selecting appropriate SiFィイD24ィエD2/HィイD22ィエD2 gas ratio : i.e., (220) orietated poly-Si were grown at small SiFィイD24ィエD2/HィイD22ィエD … More 2 ratio conditions while (400) oriented poly-Si were grown at larger SiFィイD24ィエD2/HィイD22ィエD2 ratios. Especially, the preparation of (400) oriented poly-Si on glass at low temperatures < 400℃ has been very difficult subject until this study and they showed very excellent structural and transport properties. These features let us expect that the (400) oriented poly-Si are promising materials for high operation speed TFTs. Also it was confirmed that rather high crystal fraction (83%) poly-Si were prepared at rather low temperatures of >150℃ and very small addition of SiHィイD24ィエD2 to source gas effectively increased growth rate by promoting gaseous reaction in plasma.From the investigation for growth mechanism of these preferentially oriented poly-Si, we obtained detailed relationship between growth rate, film structure, SiFィイD24ィエD2/HィイD22ィエD2 ratio and growth temperature. It was found that very surface sensitive growth is occurred under the deposition condition Where (400) oriented poly-Si are grown : especially, deposition precursors have very strong selectivity for sticking to Si 100 surface. Also selective etching of specific crystallographic plane was observed at near this condition. These results indicate that (400) preferential growth is determined by the balance between selective sticking of precursors and selective etching of specific planes. Less

本论文的工作主要集中在氢原子辅助下制备高质量半导体材料的新技术的开发上。在我们前期的研究中，已经证实了等离子体产生的高通量氢原子对II-VI族化合物Zn（S，Se）和多晶硅等半导体材料的结构和性能的影响，为了探索制备高质量半导体材料及其异质界面的方法，我们制作了一台VHF等离子体CVD装置，该装置具有两个沉积室，并通过一个闸阀连接。我们证实了在低于400℃的温度下，使用SiF_（24）Si_（22）Si_（24）Si_（22）混合气体，可以在玻璃上制备出高质量、高结晶度的多晶硅。应该注意的是，获得了一个有趣的结果：即，通过选择适当的SiF_（24）Si_（24）D_2/H_（22）Si_（22）D_2气体比来控制多晶硅的取向结构：即，(220)定向多晶硅生长在小的SiF-24纳米D2/H-22纳米D2/H-22纳米D2 ...更多信息而（400）取向的多晶Si在较大的SiF/D24/D22/D22/D24/D2比下生长。特别是在低于400℃的低温下在玻璃上制备（400）取向的多晶硅一直是一个非常困难的课题，直到本研究，它们表现出非常优异的结构和输运性能。这些特性使我们可以预期，（400）取向的多晶硅是有前途的材料，为高操作速度的TFT。同时证实了在>150℃的较低温度下制备出了较高晶化率（83%）的多晶硅，在源气体中加入少量SiH_（24）O_（24）O_（24）D_2，通过促进等离子体中的气相反应，有效地提高了生长速率。SiF纳米D24纳米D2/H纳米D22纳米D2比率和生长温度。结果表明，在（400）取向的多晶硅生长条件下，生长的多晶硅具有很强的表面敏感性，特别是沉积前体对Si 100表面的粘附具有很强的选择性。在此条件下还观察到特定晶面的选择性蚀刻。这些结果表明，（400）择优生长是由前体的选择性粘附和特定平面的选择性蚀刻之间的平衡决定的。少