Plasma Production by New Type ECR Antenna for Large Area Uniform Processing
Plasma Production by New Type ECR Antenna for Large Area Uniform Processing
批准号:
05558053
负责人:
SATO Noriyoshi
金额:
$10.37万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1995
中文摘要
用平面开槽ECR(ElectronCyclotronResonance)天线的实验结果表明:(1)用直径15cm的开槽天线容易产生直径大于45cm的均匀等离子体。这在实际应用中具有优势。(2)由于天线水冷系统的存在,在1kW范围内,等离子体密度随微波功率的增加而增加。讨论并设计了一种可置于真空室外的新型ECR天线结构,用于大功率工作。(3)即使在O_2、CF_4和N_2的反应等离子体中也能获得良好的等离子体均匀性。(4)在45cm直径范围内,O_2等离子体光致抗蚀剂灰化、SF_6等离子体多晶硅刻蚀、CF_4等离子体硅和二氧化硅刻蚀的均匀性均在5%以内。(6)A提出了一种新的控制电子和离子能量分布函数的方法,分别用于自由基和离子辅助化学反应的合格等离子体处理。电子和离子的温度被发现是由一个数量级的变化。
英文摘要
The results using plane slotted ECR (Electron Cyclotron Resonance) antenna are summarized as follows ;(1)A uniform plasma with a diameter larger than 45cm is easily produced by using a smaller slotted sntenna of 15cm in diameter. This has an advantage in a practical use.(2)The plasma density increases with the microwave power in the range of 1kW owing to the antenna water-cooling system. A new type the ECR antenna structure which can be placed outside the vacuum chamber is discussed and designed for the high power operation.(3)Good plasma uniformity is obtained even in reactive plasma with O_2, CF_4, and N_2.(4)The uniformities of the plasma processing such as photoresist ashing in O_2 plasma, polysilicon etching in SF_6 plasma, and silicon and silicon dioxide etchings in CF_4 plasma are obtained within 5% over 45cm in diameter.(6)A new method for controlling electron and ion energy distribution functions is developed for a qualified plasma processing with radical and ion-assist chemical reactions, respectively. The electron and ion temperatures are found to be varied by one order of magnitude.
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A. Takahashi: "Control of ion energy in an ECR plasma" Proc. 12th Symp. on Plasma Processing. 241-244 (1995)
A. Takahashi:“ECR 等离子体中离子能量的控制”Proc。
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通讯作者:
S. Hiyama: "Wide-area uniform plasma processing in an ECR plasma" Plasma Sources Science and Technology. (1996)
S. Hiyama:“ECR 等离子体中的广域均匀等离子体处理”等离子体源科学与技术。
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N. Sato: "Uniform plasma produced by a plane slotted antenna with magnets for electron cyclotron resonance" Applied Physics Letters. 62. 1469-1471 (1993)
N. Sato:“带有用于电子回旋共振的磁体的平面开缝天线产生的均匀等离子体”《应用物理快报》。
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中川行人: "ECRプラズマ源の特性評価とドライエッチングへの応用" 電気学会プラズマ研究会資料. EP-93-68. 29-38 (1993)
中川幸人:《ECR等离子体源的特性评价及其在干法蚀刻中的应用》日本电气工程师学会等离子体研究组资料EP-93-38(1993)。
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S. Iizuka: "Plasma density increase in uniform ECR plasma of large diameter" Proc. 10th Symp. on Plasma Processing. 121-124 (1993)
S. Iizuka:“大直径均匀 ECR 等离子体中的等离子体密度增加”Proc。
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共 22 条
Development of modified magnetron-typed plasma source
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批准号:08558043
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$8.96万
-
财政年份:1996
-
负责人:SATO Noriyoshi
-
依托单位:
Large-diameter plasma sourcs for plasma processing
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批准号:08044118
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$0.64万
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财政年份:1996
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负责人:SATO Noriyoshi
-
依托单位:
Production of large-diameter plasmas for plasma processing
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批准号:07044308
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项目类别:Grant-in-Aid for International Scientific Research.
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资助金额:$0.0万
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财政年份:1995
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负责人:SATO Noriyoshi
-
依托单位:
Plasma Science
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批准号:07308036
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$5.12万
-
财政年份:1995
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负责人:SATO Noriyoshi
-
依托单位:
The Establishment of C_<60> Plasma Production and Its Applications
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批准号:06402063
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$21.12万
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财政年份:1994
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负责人:SATO Noriyoshi
-
依托单位:
Negative Ion Plasmas
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批准号:63460219
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.8万
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财政年份:1988
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负责人:SATO Noriyoshi
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依托单位:
Laboratory Experiments on Electrostatic Potential Structure concerned with Aurora Phenomenon
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批准号:61460226
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.29万
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财政年份:1986
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负责人:SATO Noriyoshi
-
依托单位:
Experimental Investigations on New Plasma Phenomena
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批准号:60302088
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项目类别:Grant-in-Aid for Co-operative Research (A)
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资助金额:$4.74万
-
财政年份:1985
-
负责人:SATO Noriyoshi
-
依托单位:
海外基金