Defect less ferroelectric material and construction on silicon surfaces and memory device using the construction

铁电存储器是非易失性的，被认为是高速器件，因此适合普遍应用。在众多的候选存储器中，利用半导体材料的剩余极化效应来实现的铁电存储器符合定标规则，具有潜在的低功耗高速非易失性存储器的潜力，但需要优化半导体与铁电材料之间的界面。用CeO_2或Ce_xZr_t；1-x&Gt；O_2作为MFIS晶体管的缓冲绝缘层进行了实验，取得了较好的结果。

The ferroelectric memories are nonvolatile and are thought to be high-speed devices, thus making them suitable for universal applications. Among many candidate, ferrolectric memories using the fieldeffect of a semiconductor by the remanent polarization of a ferro-electric material are in accordance with the scaling rule, and potentially could have low power high speed nonvolatile memories.However, it is necessary to optimize the interface between the semiconductor and the ferroelectic material. Experiments on prospective devices using CeO_2 or Ce_xZr_<1-x>O_2 as the buffer insulator layrs of the MFIS transistors were performd with good results.