Defect less ferroelectric material and construction on silicon surfaces and memory device using the construction

铁电存储器是非易失性的，并且被认为是高速器件，从而使它们适合于普遍应用。在众多的铁电存储器中，利用铁电材料的反射极化效应实现半导体场效应的铁电存储器符合比例尺定律，具有低功耗、高速的非易失性存储器的潜力，但需要优化半导体与铁电材料之间的界面。用CeO_2或Ce_xZr_<1-x>O_2作为MFIS晶体管的缓冲绝缘层，对有前景的器件进行了实验，取得了良好的结果。

The ferroelectric memories are nonvolatile and are thought to be high-speed devices, thus making them suitable for universal applications. Among many candidate, ferrolectric memories using the fieldeffect of a semiconductor by the remanent polarization of a ferro-electric material are in accordance with the scaling rule, and potentially could have low power high speed nonvolatile memories.However, it is necessary to optimize the interface between the semiconductor and the ferroelectic material. Experiments on prospective devices using CeO_2 or Ce_xZr_<1-x>O_2 as the buffer insulator layrs of the MFIS transistors were performd with good results.