Fabrication of Digital Circuits by self-formation of atomic layr steps

将硅表面原子层台阶/平台技术应用于无光刻的超小电容阵列制备技术中，已经制备出了控制硅表面自组织现象的装置。它包括扫描隧道显微镜(STM)系统，包括H-自由基枪、K细胞和原子力显微镜(AFM)。探索了利用该装置制作超微结构，通过在超高真空条件下对Si(100)衬底进行小偏移量的退火，实现了单原子层或双原子层的高可控性形成。样品通过电流被加热，并且Si(100)衬底的偏移角朝向&lt；011&gt；方向。利用(100)面偏置的硅衬底成功地制作了矩形叠瓦式双原子层/阶梯结构，并用扫描隧道显微镜(STM)对该结构进行了观察。利用各向异性刻蚀技术还获得了更大尺寸的矩形叠瓦状阶梯/阶梯结构，并用原子力显微镜进行了观察。

Application of atomic layr step/terrace on Si surface to fabrication technology of ultra small capacitance array without using lithography.Set up for controlling self-organization phenonena on Si surfaces was already prepared. It contained STM (Scanning Tunnel Microscope) system including H-radical gun, K-cell and AFM (Atomic Force Microscope). Fabrication of ultra-small structures using this set up is explored.Formation of single or double atomiclayr steps was achieved with high cotrollability by annealing of Si (100) substrates with small off-set under ultra-high vacuum condition. Samples were heated by passing current through them and the off-set angles of Si (100) substrates are toward <011> direction. Fabrication of rectangular imbricate two atomic layr step/terrace structure using silicon substrate with (100) surface off setting <011> direction was succeeded, and this structure was observed by STM (Scanning Tunnel Microscope). More large-scale rectangular imbricate step/terrace structure was also obtained using anisotropic etching of Si substarte, and it was observed by AFM (Atomic Force Microscope).