Modeling of Nano-Scale Semiconductor Devices

纳米级半导体器件建模

• 批准号: 08650412
• 负责人: HORIO Kazushige
• 金额: $ 1.34万
• 依托单位: Shibaura Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650412/
• 关键词: nonequilibrium carrier transport; heterojunction bipolar transistor; energy transport model; cutoff frequency; gallium arsenide; device simulation

The purpose of this work is to refine the device simulation model for ultra-small-sized semiconductor devices. We have tried to refine the energy transport model that can be used to treat the nonequilibrium carrier transport in nano-scale devices.Heterojunction bipolar transistors (HBTs) are the semiconductor devices where the nonequilibrium carrier transport becomes particularly remarkable, and some analyzes by the energy transport model have been made. However, the methods of giving transport parameters were too rude. For an example, the composition- and doping-dependences of transport parameters were often neglected, and their energy dependence was not adequately incorporated. Therefore, in this work, we have developed a new method to give transport parameters (such as energy relaxation time, carrier mobility, and upper-valley fraction) for any composition, doping density and carrier energy. This is realized by using the Monte Carlo method and the linear extraporation method. This approach is applied to the simulation of AlGaAs/GaAs HBTs. As a result, we have found that the simplified conventional approaches lead to overestimation or underestimation of the velocity overshoot effects and to the inaccurate evaluation of the cutoff frequency characteristics, indicating the importance of giving adequate transport parameters. The method developed here can be easily applied to other devices that have position-dependent band structures.

这项工作的目的是完善超小型半导体器件的器件模拟模型。我们试图改进可用于处理纳米器件中非平衡载流子输运的能量输运模型。异质结双极晶体管(HBT)是一种非平衡载流子输运变得特别显著的半导体器件，并用能量输运模型进行了一些分析。然而，给出运输参数的方法太粗鲁了。例如，输运参数的组成和掺杂依赖关系往往被忽略，它们的能量依赖关系没有被充分纳入。因此，在这项工作中，我们开发了一种新的方法来给出任何组分、掺杂浓度和载流子能量的输运参数(如能量弛豫时间、载流子迁移率和上谷分数)。这是用蒙特卡罗方法和线性外推法实现的。将该方法应用于AlGaAs/GaAsHBT的模拟。结果发现，简化的传统方法导致了对速度超调效应的高估或低估，以及对截止频率特性的不准确评估，这表明了给出足够的传输参数的重要性。这种方法可以很容易地应用于其他具有位置相关能带结构的器件。

项目成果

K. Okada, A. Nakatani, and K. Horio: "Energy transport modeling of graded AlGaAs/GaAs HBTs : Importance of giving adequate transport parameters" Proceedings of 1997 International Conference on Simulation of Semiconductor Processes and Devices. 51-52 (1996

K. Okada、A. Nakatani 和 K. Horio：“分级 AlGaAs/GaAs HBT 的能量传输建模：提供足够传输参数的重要性”1997 年半导体工艺和器件模拟国际会议论文集。

K.Horio, T.Okada and A.Nakatani: "Energy transport simulation for graded HBT's : Importance of setting adequate values for transport parameters" IEEE Trans.Electron Devices. Vol.45. (1998)

K.Horio、T.Okada 和 A.Nakatani：“分级 HBT 的能量传输模拟：为传输参数设置适当值的重要性”IEEE Trans.Electron Devices。

K.Okada, A.Nakatani and K.Horio: "Energy transport modeling of graded AlGaAs/GaAs HBTs : Importance of giving adequate transport parameters" Proceedings of 1997 International Conference on Simulation of Semiconductor Processed and Devices. 51-52 (1996)

K.Okada、A.Nakatani 和 K.Horio：“分级 AlGaAs/GaAs HBT 的能量传输建模：提供足够传输参数的重要性”1997 年半导体加工和器件模拟国际会议论文集。

T.Okada and K.Horio: "Study on Possible Double Peaks in Cutoff Frequency characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation" Proceedings of the Sth International Workshop on Computationa1 Electronics. (1998)

T.Okada 和 K.Horio：“通过能量传输模拟研究 AlGaAs/GaAs HBT 截止频率特性中可能的双峰”第 1 届国际计算电子研讨会论文集。

K.Horio, T.Okada and A.Nakatani: "Energy Transport Simulation for Graded HBT^1s : Inportance of Setting Adequate Values for Transgport Parameters" IEEE Trans.Electron Devices. Vol.45. (1998)

K.Horio、T.Okada 和 A.Nakatani：“分级 HBT^1s 的能量传输仿真：为 Transgport 参数设置适当值的重要性”IEEE Trans.Electron 设备。