Simulation of Widegap Semiconductor Devices

宽禁带半导体器件的仿真

• 批准号: 17560317
• 负责人: HORIO Kazushige
• 金额: $ 2.11万
• 依托单位: Shibaura Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560317/
• 关键词: AlGaN; GaN HEMT; current collapse; drain lag; gate lag; trap; buffer layer; device simulation; A1GaN; GaN; 電解効果トランジスタ; 電流スランプ

Although many experimental results are reported on current collapse and slow current transients (gate lag and drain lag) in AlGaN/GaN HEMTs, few theoretical works are performed. Therefore, we have made two-dimensional analysis of AlGaN/GaN HEMTs in which a deep donor and a deep acceptor are considered in the buffer layer, and found that lag phenomena and current collapse could be reproduced. Particularly, it is shown that gate lag is correlated with relatively high source access resistance of AlGaN/GaN HEMTs, and that drain lag could be a major cause of current collapse. It is also shown that current collapse is more pronounced when the deep-acceptor density is higher and when an off-state drain voltage is higher. It is concluded that to minimize current collapse in AlGaN/GaN HEMTs, an acceptor density in the buffer layer should be made low, although current cutoff behavior may be degraded when the gate length is short.

虽然许多实验结果报道了AlGaN/GaN HEMT的电流崩塌和慢电流瞬态（栅极滞后和漏极滞后），很少有理论工作进行。因此，我们已经做了二维分析的AlGaN/GaN HEMT中，深施主和深受主被认为是在缓冲层中，并发现滞后现象和电流崩溃可以重现。特别是，它表明，栅极滞后与AlGaN/GaN HEMT的相对较高的源极接入电阻，漏极滞后可能是电流崩溃的主要原因。它还表明，电流崩溃是更明显的深受主密度较高时，关断状态的漏极电压较高。得出的结论是，为了最大限度地减少AlGaN/GaN HEMT中的电流崩塌，在缓冲层中的受体密度应该是低的，虽然电流截止行为可能会退化时，栅极长度短。

项目成果

Numerical simulation of drain-current transients and current compression in GaN MESFETs

GaN MESFET 中漏极电流瞬态和电流压缩的数值模拟

• 发表时间: 2006
• 期刊: Proceedings of Nanotech 2006 Vol. 3
• 作者: H.Takayanagi;K.Itagaki;K.Horio
• 通讯作者: K.Horio

Numerical analysis of pulsed I-V curves and current collapse in GaN FETs as affected by buffer trapping

受缓冲捕获影响的 GaN FET 中的脉冲 I-V 曲线和电流崩溃的数值分析

• 发表时间: 2005
• 期刊: Proceedings of 2005 IEEE Compound Semiconductor IC Symposium
• 作者: H.Nakano;H.Takayanagi;K.Yonemoto;K.Horio
• 通讯作者: K.Horio

Analysis of buffer-related lag phenomena and current collapse in GaN FETs

• DOI: 10.1002/pssc.200674715
• 发表时间: 2007-06
• 期刊: Physica Status Solidi (c)
• 作者: K. Itagaki;N. Kobayashi;K. Horio

Similarities of butter-related lag phencaeia and current stamp between Gan MESFETs and AlGaNiGan HEMTs

Gan MESFET 和 AlGaNiGan HEMT 之间与黄油相关的滞后现象和电流标记的相似性

• 发表时间: 2007
• 期刊: Proceedings of the 3rd Asia-Pacific workshop on Widogap Semiconductors
• 作者: K.Horio;H.Takayanagi;K.Itagaki;A.Nakajima
• 通讯作者: A.Nakajima

Anaya's of buffer-related Tag phenomena and current collapse in Gan FETs

Anaya 的缓冲器相关标签现象和 Gan FET 中的电流崩溃

• 发表时间: 2007
• 期刊: phys. stat. sol. (c) vol4,No.4
• 作者: K.Itagaki;N.kobayashi;K.Horio
• 通讯作者: K.Horio