Identification of conduction due to the spontaneous electron layer on the clean free surface of ferroelectric
Identification of conduction due to the spontaneous electron layer on the clean free surface of ferroelectric
批准号:
13640334
负责人:
WATANABE Yukio
金额:
$2.18万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002
中文摘要
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英文摘要
The large size effect of ferroelectric is probably due to its unique surface rather than to an intrinsic/essential limitation. The present study clarifies the fundamental properties of a possible new two dimensional electron phase coupled strongly with lattice that is expected to exist on the top surface of the ferroelectric and determine its minimum size limit. This electron phase is expected to exhibit novel phenomena such as unusual electron conduction.We have suggested that the large size effect of ferroelectric and the limitations of FET-type ferroelectric non-volatile memories are probably due to its unique surface rather than to an intrinsic limitation. The present study have attempted to clarify the fundamental properties of a possible new two dimensional electron phase coupled strongly with lattice that is expected to exist on the top surface of the ferroelectric and determine its minimum size limit. This electron phase is expected to exhibit novel phenomena such as unusual electron conduction as well as the response to UV light and the possibility of UV emission and electron emission, leading to a new research area of ferroelectrics. The existence of this hypothetic electron layer and some of these properties are experimentally confirmed by measuring the surface conduction of pure BaTiO_3 single crystals in ultrahigh vacuum. Moreover, we found a new atomic force microscopy to observe 180° domains utilizing the properties of surface electron layer.
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M.Tanamura, H.Kida, Y.Watanabe, and N.Toyama: "A NEW APPROACH OF ELEMENT SENSITVE ION BEAM ETCHING BASED ON MASS DEPENDENCE OF SPUTTERING FOR METAL OXIDES"J.Korean Phys.Soc.. (accepted for publication).
M.Tanamura、H.Kida、Y.Watanabe 和 N.Toyama:“基于金属氧化物溅射质量依赖性的元素敏感离子束蚀刻的新方法”J.Korean Phys.Soc.(已接受出版)
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M.Tanamura, H.Kida, Y.Watanabe, N.Toyama: "A NEW APPROACH OF ELEMENT SENSITVE ION BEAM ETCHING BASED ON MASS DEPENDENCE OF SPUTTERING FOR METAL OXIDES"J. Korean Phys. Soc.. (未定). (2003)
M.Tanamura、H.Kida、Y.Watanabe、N.Toyama:“基于金属氧化物溅射质量依赖性的元素敏感离子束蚀刻新方法”J. 韩国物理学会。 (2003)
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通讯作者:
Y.Watanave et al.: "Size effect study by Bulk Crystals : optical and de dielectric repose of oxygen vacant BaTiO_3"Ferroelectrics. 259. 37-42 (2001)
Y.Watanave 等人:“块状晶体的尺寸效应研究:氧空位 BaTiO_3 的光学和去介电休止”铁电体。
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Y.Watanabe, A.Masuda: "Theoretical Stability of Polarization in Metal/Ferroelectric Insulator /Semiconductor and Related Structure"Jpn.J.Appl.Phys.. 40(9B). 5610-5614 (2001)
Y.Watanabe、A.Masuda:“金属/铁电绝缘体/半导体及相关结构中极化的理论稳定性”Jpn.J.Appl.Phys.. 40(9B)。
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Y.Watanabe, et al.: "Summary of Symposium "What is the finite size effect in nano-structures of transitionmetal oxides and ferroelectrics""BUTSURI(bulletin of the Physical Society of Japan). 57(2). 112-112 (2002)
Y.Watanabe 等人:“研讨会摘要“过渡金属氧化物和铁电体纳米结构中的有限尺寸效应是什么””BUTSURI(日本物理学会通报)。
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