OBSERVATION OF GROWING KINETICS OF SILICON PARTICULATES IN SILNAE PLASMAS

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Growing process and behavior of particulates in a silane plasma are experimentally studied using a new method combined an rf discharge modulation technique with two laser light scattering techniques. The obtained results are summarized as follows: particulates tend to be sustained around plasma/sheath boundaries near electrodes, especially the rf electrode; larger particulates exist in a lower space potential region near the rf electrode; particulate size and density amount to 60-180 nm and 10^8-10^9 cm^<-3> in 1-2 s after the rf-power-on. The particulate growth rate, being very high compared to a film deposition rate, can be explained by taking into account the contribution of positive-ion and/or radical fluxes. The particulate-trapping around the boundary can be explained by balance between electrostatic force and ion drag force exerting on a particulate. An effect of viscous force on a particulate and a particulate suppression mechanism for rf modulated discharges are also revealed.