Development of in-situ measurement method of sub-nm size particles in processing plasmas

加工等离子体中亚纳米尺寸颗粒的原位测量方法的开发

• 批准号: 08555019
• 负责人: WATANABE Yukio
• 金额: $ 7.62万
• 依托单位: KYUSHU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555019/
• 关键词: cluster; particle; dust; photoemission; photo-ionization; photo-detachment; amorphous silicon; silane plasma; アモルファスシリコン; 光脱離; シリコン; サブナノ微粒子

It is important to understand growth kinetics of particles in processing plasmas, because they are harmful for fabrication of electronic devices and also promising as new materials. However, information on growth of particles below 10 nm in size is very limited because of lack of detection methods of such particles. In this study, we have developed a photon-counting laser-light-scattering (PCLLS) method detectable particles in 1-10 nm size and above 10^6cm^<-3> in density and a method (TPE-MI method), which is combined a threshold photoemission method with the microwave interferometry, detectable particles below a few rim in size and above 10^9cm^<-3> in density. By using these methods, we have revealed the following results regarding growth of particles in silane rf plasmas under so-called device-quality conditions : 1) density of sub-nm particles is by more than one order higher than the plasma positive ion density and most of the particles are neutral, 2) particles nucleate and grow around the plasma/sheath boundary where radicals are produced actively, 3) in the initial growth phase of particles, they grow due to deposition of polymerized species, which are originated from short lifetime SiH_2 radicals.

等离子体加工过程中粒子的生长动力学研究是非常重要的，因为它们不仅对电子器件的制造有害，而且作为新材料也很有前途。然而，由于缺乏这种颗粒的检测方法，关于尺寸小于10 nm的颗粒生长的信息非常有限。本研究中，我们发展了一种光子计数激光光散射（PCLLS）方法和一种将<-3>阈值光电子能谱法与微波干涉法相结合的方法（TPE-MI法），前者可检测粒径在1-10 nm之间、密度在10^6 cm ~ 2以上的颗粒，后者可检测粒径在几个边缘以下、密度在10^9 cm ~ 2以上的颗粒<-3>。通过使用这些方法，我们揭示了以下关于在所谓的器件质量条件下硅烷射频等离子体中颗粒生长的结果：1）亚纳米粒子的密度比等离子体正离子密度高一个数量级以上，并且大多数粒子是中性的，2）粒子在等离子体/鞘层边界周围成核并生长，在该边界处活性地产生自由基，（3）在颗粒生长初期，由于短寿命SiH_2自由基的聚合产物的沉积，颗粒开始生长。

项目成果

M.Shiratani and Y.Watanabe: "Detection of particles in plasmas by photon-counting laser-light-scattering method" OYO BUTURI. Vol.68 (in press). (1998)

M.Shiratani 和 Y.Watanabe：“通过光子计数激光光散射方法检测等离子体中的粒子” OYO BUTURI。

Yukio Watanabe: "Contribution of short lifetime radicals to growth of particles in SiH_4 HF discharges and effects of particles on deposited films" J.Vac.Sci.Technol.A. 14,3. 995-1001 (1996)

Yukio Watanabe：“短寿命自由基对 SiH_4 HF 放电中颗粒生长的贡献以及颗粒对沉积薄膜的影响”J.Vac.Sci.Technol.A。

白谷 正治: "フォトンカウンティングレーザ散乱法によるプラズマ中の微粒子計測" 応用物理. 68・5:印刷中. (1998)

Masaharu Shiratani：“使用光子计数激光散射法测量等离子体中的细颗粒”应用物理 68・5：出版中（1998 年）。

Tsuyoshi Fukuzawa: "Detection of partticles in rf silane plasmas using photoemission method" J.Appl.Phys.80,6. 3202-3207 (1996)

Tsuyoshi Fukuzawa：“使用光电发射方法检测射频硅烷等离子体中的粒子”J.Appl.Phys.80,6。

Masaharu Shiratani: "Development of photon-counting laser-light-scattering method for detection of nano-particles formed in CVD plasmas" Rev.Laser Eng. 26・6. 449-452 (1998)

白谷正治：“用于检测 CVD 等离子体中形成的纳米粒子的光子计数激光光散射方法的开发”Rev.Laser Eng. 26・6 (1998)。