Development of New Methods for Structural Analysis of Silicon/Oxide Interface and Silicon Surface

硅/氧化物界面和硅表面结构分析新方法的开发

• 批准号: 14550792
• 负责人: MATSUMURA Michio
• 金额: $ 2.37万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550792/
• 关键词: Silicon; Oxide; Interface; Surface; Electrochemistry; Analytical Method

1. Establishment of the experimental conditions.When Si/Si0_2 samples are immersed in an aqueous HF solution, anodic current flows at the time Si surface is exposed to the solution. We found that under certain conditions, the electrochemical measurement gives very reproducible results.2. Electrochemical analysis of the Si/SiO_2 interface prepared under different conditions.The Si/SiO_2 samples prepared under different conditions show different electrochemical properties. This finding indicated that' the electrochemical method is very sensitive to the interfacial structure.3. Analytical results for the Si/SiO_2 samples with different crystalline orientations.The electrochemical results for the Si/SiO_2 samples showed certain relationship with the crystalline orientation of the Si wafer Based on the structural model for Si/Si0_2 interface, we succeeded in the explanation of the dependence on the crystalline orientation. In addition, we succeeded to correlate the current to the annealing of the samples. These observations verify the usefulness of the newly developed method for the analysis of the Si/Si0_2 interfacial structure.4. Development of a new method for the structural analysis of the Si surface.We found that Si surface terminated with hydrogen is oxidized in a layer-by-layer manner, when Si surface terminated with hydrogen is electrochemically oxidized. We also found that the current -voltage curve is very sensitive to the conditions of the Si sample. On the basis of the finding, we proposed a new method for the structural analysis of Si samples.5. Contamination of Si surface by organic contaminants included in air and oxidation of Si surface triggered by the contaminants.We found that the contamination of Si surface starts by forming islands of organic materials included in air. The contaminants triggered the oxidation of Si.

1.实验条件的建立：当Si/SiO_2样品浸泡在HF水溶液中时，当Si表面暴露在HF水溶液中时，有阳极电流流过。我们发现，在一定的条件下，电化学测量给出了非常重复的结果.不同条件下制备的Si/SiO_2界面的电化学分析不同条件下制备的Si/SiO_2样品表现出不同的电化学性能。这一发现表明电化学方法对界面结构非常敏感.对不同晶向的Si/SiO_2样品的分析结果表明，Si/SiO_2样品的电化学测试结果与硅片的晶向有一定的关系。此外，我们成功地将电流与样品的退火相关联。这些观察结果验证了新发展的分析Si/SiO_2界面结构的方法的有效性.发展了一种分析硅表面结构的新方法，我们发现，在电化学氧化氢封端的硅表面时，氢封端的硅表面以逐层方式被氧化。我们还发现，电流-电压曲线是非常敏感的硅样品的条件。在此基础上，我们提出了一种新的Si样品结构分析方法.研究了空气中有机污染物对Si表面的污染以及污染物引发的Si表面氧化，发现Si表面的污染是从空气中有机物形成岛开始的。污染物引发Si的氧化。

项目成果

F.Bensliman: "Anodic current transient for n-Si/SiO_2 electrodes in HF solution : the relationship between the current and the interface structure"J.Electroanal.Chem.. (印刷中).

F. Bensliman：“HF 溶液中 n-Si/SiO_2 电极的阳极电流瞬态：电流与界面结构之间的关系”J.Electroanal.Chem..（印刷中）。

A.Fukuda: "In situ Atomic Force Microscopic Observation of Growth of Islands of Organic Contaminants on an H-Si(111) Surface"Appl.Surf.Sci.. (印刷中).

A.Fukuda：“H-Si(111) 表面有机污染物岛生长的原位原子力显微镜观察”Appl.Surf.Sci..（出版中）。

F.Bensliman et al.: "Analysis of Anodic Oxidation Current of Flattened p-Type Si(111) in Aqueous Solution"J.Electrochem.Soc.. 150-9. G527-G531 (2003)

F.Bensliman 等人：“水溶液中扁平 p 型 Si(111) 的阳极氧化电流分析”J.Electrochem.Soc. 150-9。

F.Bensliman: "Analysis of Anodic Oxidation Current of Flattened p-Type Si(111) in Aqueous Solution"J.Electrochem.Soc.. 150. G527-G531 (2003)

F.Bensliman：“水溶液中扁平 p 型 Si(111) 的阳极氧化电流分析”J.Electrochem.Soc.. 150. G527-G531 (2003)

F.Bensliman et al.: "Anodic current transient for n-Si/SiO_2 electrodes in HF solution : the relationship between the current and the interface structure"J.Electroanal.Chem.. (in press).

F.Bensliman等人：“HF溶液中n-Si/SiO_2电极的阳极电流瞬态：电流与界面结构之间的关系”J.Electroanal.Chem..（印刷中）。