Development of Novel, High-Speed, and Environmentally-Friendly Thin Film Deposition Technology using Supercritical Carbon Dioxide Fluids

该项目旨在为使用超临界二氧化碳流体的高集成和高功能设备应用提供一种新颖的、环保的薄膜沉积技术。在这个项目中，我们开发了一种新的沉积处理器，它可以独立控制沉积处理器，其功能类似于普通的薄膜处理器。采用铜络合物的氢还原化学方法沉积铜薄膜，以期应用于ULSI金属化。结果表明，铜的沉积过程遵循朗缪尔-辛舍伍德沉积机制，氢的化学吸附是铜生长的速率控制步骤。从沉积机理的角度研究了沉积的顺应性和缝隙填充能力。提高沉积速率和改善填隙能力的指导原则是促进氢的供应和顺利的化学吸附。未反应的沉积前驱体被收集在沉积处理机的废气中，并被提纯以供重复使用/再循环。还研究了新的沉积化学方法，如用于铂、Ru和氧化锌的沉积。利用该技术的深度和高深宽比沉积能力，制作了用于MEMS/NEMS应用的纳米元件，例如用于三维集成电路的纳米棒和通孔。综上所述，我们已经完成了对该技术的建议，并成功地开发了该技术的新应用。

This project was aimed to providing a novel and environmentally-friendly technology for depositing thin films for highly-integrated and highly-functioning device applications using supercritical carbon dioxide fluids.In this project, we have developed a new deposition processor that allows independent control of deposition processor that functions like common thin film processors. Hydrogen reduction chemistry of Cu chelates was employed to deposit Cu thin films, minding to apply to ULSI metallization. It was found that Cu deposition proceeds through Langmuir-Hinshelwood deposition mechanism and that hydrogen chemisorption is the rate-determining step for Cu growth. Deposition comformability and gap-filling capability were also studied with respect to the deposition mechanism. The guiding principles for increasing deposition rate and improving gap-fill capability were found to be to promote hydrogen supply and its smooth chemisorption. The unreacted deposition precursor was collected at the exhaust of the deposition processor and was purified for its reuse/recyling.New deposition chemistries were also studied such as for Pt, Ru, and ZnO deposition. Nano components for MEMS/NEMS applications, for instance, nano rods and thorough vias for 3-dimensional integrated circuits, were fabricated with these materials, availing deep and high-aspect ratio deposition capability of this technology.In summary, we have accomplished our proposals on this technology and have succeeded to develop its new applications.