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Development of new method of crystal growth using dynamic electromagnetic force

Development of new method of crystal growth using dynamic electromagnetic force
开发利用动态电磁力晶体生长的新方法
批准号:
19360012
负责人:
KAKIMOTO Koichi
金额:
$12.23万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2009

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中文摘要
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英文摘要
We developed new methods of crystal growth of silicon and SiC by using external electro-magnetic fields. The study focused on the crystal growth methods of liquid phase epitaxy and sublimation method. We clarified how gas pressure in a furnace during crystal growth in a furnace for sublimation growth affects growth velocity of SiC. Furthermore, we studied the effects on frequency on flow of the solution in liquid phase epitaxy method.
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DOI: 10.1016/j.jcrysgro.2009.02.041
发表时间: 2009-04
期刊: Journal of Crystal Growth
影响因子: 1.8
作者: [K. Kakimoto;Lijun Liu]
通讯作者: K. Kakimoto;Lijun Liu
Effect of crucible rotation on oxygen concentration in the melt during crystallization of silicon for solar cells
太阳能电池用硅晶化过程中坩埚旋转对熔体氧浓度的影响
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [S. Watanabe, S. Seki, M. Sugimoto, M. Yoshikawa, S. Tagawa, S. Tsukuda, S. Tanaka, 一色秀夫, S. Nakano]
通讯作者: S. Nakano
Numerical and experimental investigation of impurity distribution polycrystals for solar cells
太阳能电池用杂质分布多晶的数值和实验研究
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者: [山本琢也, 他, Shougo Watanabe, J. Takeya, Satoshi Tsukuda, Koichi Kakomoto]
通讯作者: Koichi Kakomoto
DOI: --
发表时间: 2010
期刊: 日本結晶成長学会誌 36, No. 4
影响因子: --
作者: [Bing Gao, et al]
通讯作者: et al
41
    Development of macro-nano combined growth method for energy saving
    • 批准号:
      24360012
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $11.56万
    • 财政年份:
      2012
    • 负责人:
      KAKIMOTO Koichi
    • 依托单位:
    Establishment of new method of crystal growth with well-controlled convection by electro-magnetic force
    • 批准号:
      14350010
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $9.66万
    • 财政年份:
      2002
    • 负责人:
      KAKIMOTO Koichi
    • 依托单位:
    STUDY ON DEFECT FORMATION IN BULK CRYSTAL FOR ELECTRONIC DEVICES
    • 批准号:
      09650813
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.11万
    • 财政年份:
      1997
    • 负责人:
      KAKIMOTO Koichi
    • 依托单位:
    海外基金