Fabrication of a novel ultra-violet light-emitting device using gadolinium-doped aluminum nitride

使用掺钆氮化铝制备新型紫外发光器件

• 批准号: 19360148
• 负责人: SUZUKI Akira
• 金额: $ 11.81万
• 依托单位: Ritsumeikan University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19360148/
• 关键词: ワイドギャップ半導体; 窒化アルミニウム; ガドリニウム; 希土類; MBE成長法; スパッタ製膜法; 紫外発光; 内殻遷移

To develop a novel ultra-violet (UV) light-emitting device using UV emission from Gd in AlN films, film fabrication and film properties were studied. By a low-cost fabrication method of radio-frequency (RF) sputtering on Si wafers, relations between fabrication conditions and film properties were examined, and those conditions to obtain UV emission of around 315nm at room temperature were found. Optical measurements to find emission mechanism and film fabrication by molecular-beam growth (MBE) were also carried out.

为了利用氮化铝薄膜中Gd的紫外发光特性开发新型紫外发光器件，对氮化铝薄膜的制备和性能进行了研究。采用低成本的射频（RF）溅射法在Si基片上制备了具有315nm紫外光发射的薄膜，研究了制备条件与薄膜性能的关系，确定了室温下获得315nm紫外光发射的条件，并进行了发射机理的光学测量和分子束生长（MBE）薄膜制备。

项目成果

スパッタ法で作製したGd添加AlN膜の結晶性と光学特性の基板及び膜厚依存性

溅射法制备的 Gd 掺杂 AlN 薄膜的结晶度和光学性能与基底和薄膜厚度的关系

• 发表时间: 2008
• 作者: 高山功介;小楠和彦;S.Emura;木山善男
• 通讯作者: 木山善男

Ferromagnetism and luminescence of diluted magnetic semiconductors GaGdN and AIGdN

稀磁半导体 GaGdN 和 AIGdN 的铁磁性和发光

• 发表时间: 2009
• 期刊: Materials Research Society Symposium Proceedings Vol.1111
• 作者: 高山功介;小楠和彦;S.Emura
• 通讯作者: S.Emura