Research on nitride based semiconductor power devices

为了实现低损耗的功率器件并构建与之相关的半导体物理结构，制备和表征了氮化物基材料和器件。所获得的结果如下。首先，利用深能级光谱表征了AlGaN/GaN异质结界面缺陷与器件性能之间的关系。结果发现，器件的故障与AlGaN/GaN异质结界面的特定缺陷能级有关。其次，表征了氢气对器件性能的影响。结果发现，金属/半导体界面的性质对器件性能起着至关重要的作用。

Nitride-based materials and devices were fabricated and characterized in order to realize power devices with low loss and structure the associated semiconductor physics. The obtained results are described as follows. First, the correlation between defects in the AlGaN/GaN hetero-interfaces and device performances was characterized using deep level optical spectroscopy. As a result, malfunction of devices was found to relate to particular defect levels in the AlGaN/GaN hetero-interfaces. Second, influence of hydrogen on the device performances was characterized. As a result, property of the metal/semiconductor interfaces was found to play a critical role in device performances.