Theoretical study on abnormal phenomena and degradation in GaN-based HEMTs and reuction method of them

GaN基HEMT异常现象和退化的理论研究及其还原方法

• 批准号: 23560411
• 负责人: HORIO KAZUSHIGE
• 金额: $ 3.33万
• 依托单位: Shibaura Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560411/
• 关键词: ガリウムナイトライド; HEMT; 電流コラプス; フィールドプレート; 耐圧; ２次元解析; バッファ層; トラップ; 計算機解析

Two-dimensional analysis of slow current transients in AlGaN/GaN field effecttransistors is performed and their mechanisms are studied. Also the method of reduce these slow transients is discussed. Particularly, it is shown that the slow transients are reduced by introducing a so-called field plate, and the optimum field-plate structures are discussed. It is also discussed how the off-state breakdown voltage is enhanced by introducing a field plate.

本文对AlGaN/GaN场效应晶体管慢电流瞬态进行了二维分析，并对其机理进行了研究。并讨论了减小慢瞬变的方法。特别是，它表明，通过引入所谓的场板，减少了慢瞬态，并讨论了最佳场板结构。还讨论了如何通过引入场板来提高关态击穿电压。

项目成果

フィールドプレート構造微細AlGaN/GaN HEMTの耐圧特性の数値解析

场板结构精细AlGaN/GaN HEMT耐压特性数值分析

• 发表时间: 2011
• 作者: 柴山;平野;若林;山内;中野;小野寺，中島，堀尾
• 通讯作者: 小野寺，中島，堀尾

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-k Passivation Layer

• DOI: 10.1109/ted.2014.2298194
• 发表时间: 2014-03-01
• 期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
• 影响因子: 3.1
• 作者: Hanawa, Hideyuki;Onodera, Hiraku;Horio, Kazushige
• 通讯作者: Horio, Kazushige

Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs

源极场板 AlGaN/GaN HEMT 之间的滞后、电流崩塌和击穿特性的相似性

• 发表时间: 2013
• 作者: H. Hanawa;H. Onodera;A. Nakajima;K. Horio
• 通讯作者: K. Horio

微細AlGaN/GaN HEMTの耐圧特性に与えるバッファ層内不純物とフィールドプレートの影響の解析

缓冲层和场板中杂质对精细AlGaN/GaN HEMT击穿电压特性的影响分析

• 发表时间: 2012
• 作者: Y. Nakatani;T. Hayashi;H. Itozaki;小野寺，中島，堀尾
• 通讯作者: 小野寺，中島，堀尾

Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small-sized AlGaN/GaN high electron mobility transistors

• DOI: 10.1088/0268-1242/27/8/085016
• 发表时间: 2012-08
• 期刊: Semiconductor Science and Technology
• 影响因子: 1.9
• 作者: H. Onodera;K. Horio