Innovation of energy and environment-friendly devices by nanocrystal effect
Innovation of energy and environment-friendly devices by nanocrystal effect
批准号:
24000013
负责人:
KISHINO Katsumi
金额:
$344.86万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Specially Promoted Research
财政年份:
2012
资助国家:
日本
项目状态:
已结题
起止时间:
2012 至 2016
中文摘要
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英文摘要
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Fabrication of GaN nanostructure by hydrogen environment anisotropic thermal etching (HEATE) technique
氢环境各向异性热刻蚀(HEATE)技术制备GaN纳米结构
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[R. Kita, H. Hachiya, R. Hachiya, and A. Kikuchi]
通讯作者:
and A. Kikuchi
Density of states scaling in disordered 3D topological insulators
无序 3D 拓扑绝缘体中的态密度缩放
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[Kenichi Umeda, Kei Kobayashi, Noriaki Oyabu, Kazumi Matsushige, and Hirofumi Yamada, T. Ohtsuki]
通讯作者:
T. Ohtsuki
InGaN系規則配列ナノコラムにおける発光色制御
InGaN 基有序纳米柱中的发射颜色控制
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[柳原藍, 岸野克巳]
通讯作者:
岸野克巳
Optical Resonant System Based on Hexagonal GaN Microdisks
基于六方氮化镓微盘的光学谐振系统
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[T. Kouno, M. Sakai, K. Kishino, and K. Hara]
通讯作者:
and K. Hara
Visible to Infrared InGaN-Based Nanocolumn Emitters
可见红外 InGaN 纳米柱发射器
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Shigematsu, Y., Niwa, T., Rehnberg, E., Toyoda, T., Yoshida, S., Mori, A., Wakabayashi, M., Iwakura, Y., Ichinose, M., Kim, Y. J., and Ushijima, T., K.Kishino]
通讯作者:
K.Kishino
共 270 条
Innovation of Three Primary Colors Emitting Devices by Nanocolumn Crystals
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批准号:19H00874
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$29.29万
-
财政年份:2019
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负责人:KISHINO Katsumi
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依托单位:
Basic research on optical communication wavelength inter-subband transition of III-nitride semiconductors
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批准号:14205057
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$34.78万
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财政年份:2002
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负责人:KISHINO Katsumi
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依托单位:
Study of Ill-V Nitride Semiconductor Resonant Cavity Enhanced Photodetector by Molecular Beam Epitaxy
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批准号:09650388
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.18万
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财政年份:1997
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负责人:KISHINO Katsumi
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依托单位:
Research on II-VI Compounds Semiconductor Lasers
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批准号:04452178
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.39万
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财政年份:1992
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负责人:KISHINO Katsumi
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依托单位:
RESEARCH OF STACKED TWIN-ACTIVE LAYER GaInAsP/InP DYNAMIC SINGLE MODE LASERS
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批准号:63550295
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.47万
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财政年份:1988
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负责人:KISHINO Katsumi
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依托单位:
海外基金