無触媒窒化物系ナノワイヤの有機金属化合物気相成長と太陽光発電素子応用

非催化氮化物纳米线有机金属化合物气相生长及其在太阳能发电装置中的应用

• 批准号: 16F14366
• 负责人: 天野 浩
• 金额: $ 0.77万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2016
• 资助国家: 日本
• 起止时间: 2016-04-22 至 2017-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16F14366/
• 关键词: Gallium Nitride; nanowire; nanorod; solar cells; Pulsed-mode growth; MOCVD; nonpolar; GaN on Si

In this study, we have focused on the “InGaN/GaN core-shell nanowire-based solar cells”. Accompanying to the superior properties of GaN core nanowire array, the use of InGaN materials is able to cover the almost all solar spectral range from 0.7 eV to 3.4 eV. This can open up the new chance for III-V solar cells to overcome the performance of traditional inorganic solar cells, which are based on Si or GaAs materials. As this project comes to the last year, we studied many optical and material properties of GaN-based nanowires. In particular, we performed the growth of GaN nanowires with various templates. It gives rise to new chance to demonstrate optoelectronic devices with controlled orientation and morphology. As a result, we have reported three SCI papers and nine international conference talks. Also, international collaboration has simulaneously been carried out with South Korea and France with the similar project topics. These international joint research inspired us to study deeply about the "InGaN-based solar cells". Although we are sure that we contributed many points on the development of the topic, still many rooms remained to demonstrate the high efficiency devices. Therefore, the continuation of the work for this project is really necessary to advance the nanowire-based optoelectronics.

在本研究中，我们将重点放在“InGaN/GaN核壳结构异质结太阳能电池”上。由于GaN核心纳米线阵列的上级特性，InGaN材料的使用能够覆盖从0.7 eV到3.4 eV的几乎所有太阳光谱范围。这可以为III-V太阳能电池开辟新的机会，以克服基于Si或GaAs材料的传统无机太阳能电池的性能。随着该项目进入最后一年，我们研究了GaN基纳米线的许多光学和材料特性。特别是，我们进行了各种模板的GaN纳米线的生长。这为研究取向和形貌可控的光电子器件提供了新的契机。结果，我们报告了三篇SCI论文和九次国际会议演讲。此外，还与韩国和法国就类似的项目主题开展了国际合作。这些国际合作研究启发了我们对“InGaN基太阳能电池”的深入研究。虽然我们确信我们对该主题的发展做出了许多贡献，但仍然有许多房间需要展示高效率设备。因此，该项目的继续工作对于推进基于MEMS的光电子学是非常必要的。

项目成果

Study of AlN Nucleation by Directional Sputtering for Growth of Orientation-Controlled GaN on Si(001) Substrates

Si(001) 衬底上定向溅射 AlN 成核用于定向控制 GaN 生长的研究

• 发表时间: 2016
• 作者: H. J. Lee;S. Y. Bae;K. Lekhal;A. Tamura;Y. Honda;and H. Amano
• 通讯作者: and H. Amano

Control of the growth plane of semipolar GaN on Si (001) by adjusting the direction of sputtered AlN buffer layer

通过调节溅射AlN缓冲层的方向控制Si(001)上半极性GaN的生长面

• 发表时间: 2016
• 作者: H. J. Lee;S. Y. Bae;K. Lekhal;T. Suzuki;M. Deki;Y. Honda;and H. Amano
• 通讯作者: and H. Amano

Reduction of leakage current density in homoepitaxial m-plane GaN by controlling V/III ratios for high-power device applications

通过控制高功率器件应用的 V/III 比率来降低同质外延 m 面 GaN 的漏电流密度

• 发表时间: 2016
• 作者: O. 1 Barry;A. Tanaka ;K. Nagamatsu;S. Y. Bae;K. Lekhal;M. Deki;S. Nitta;Y. Honda;H. Amano
• 通讯作者: H. Amano

Universite Clermont Auvergne/Institute Pascal(France)

克莱蒙奥弗涅大学/帕斯卡研究所（法国）

Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

通过 HVPE 选择性区域生长控制规则 GaN 微棒阵列的形貌

• DOI: 10.1016/j.jcrysgro.2016.05.008
• 发表时间: 2016
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: Kaddour Lekhal;Si-Young Bae;Ho-Jun Lee;Tadashi Mitsunari;Akira Tamura;Manato Deki;Yoshio Honda;Hiroshi Amano
• 通讯作者: Hiroshi Amano