High-Indium-content nonpolar quantum wells for green, yellow, and red light emitters

用于绿光、黄光和红光发射器的高铟含量非极性量子阱

• 批准号: 72537150
• 负责人: Professor Dr. Andreas Hangleiter
• 金额: --
• 依托单位: Institut für Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2008
• 资助国家: 德国
• 起止时间: 2007-12-31 至 2014-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/72537150?language=en
• 关键词: Indium; content; nonpolar; quantum; wells

The lack of control of polarization fields is presently a major factor limiting application of III-nitride based heterostructures for green and longer wavelength light-emitting devices, including green laser diodes.By controlling polarization fields through the use of non-polar orientations we aim at opening the door for better visible light emitters. Epitaxial growth of non-polar heterostructures will be studied and optimized for low defect densities, abrupt interfaces and homogeneous compositions. The emphasis is on GaInN quantum wells with high Indium content suited for green and longer wavelength applications. As a key, Indium incorporation beyond 30% needs to be controlled maintaining full lattice-matching as well as fully homogeneous and stochiometric growth.Time-resolved optical spectroscopy as well as optical gain spectroscopy reveal the influence of nonradiative recombination losses, both due to defects and to intrinsic recombination. Direct information about defect levels is obtained through resonant photocurrent noise spectroscopy. In collaboration with partners from the Research Group, the non-polar approach will be compared to the semipolar and the polar approach.

目前，缺乏对偏振场的控制是限制III族氮化物基异质结构在绿色和更长波长发光器件（包括绿色激光二极管）中应用的主要因素。通过使用非极性取向控制偏振场，我们的目标是为更好的可见光发射器打开大门。将研究和优化非极性异质结构的外延生长，以实现低缺陷密度、突变界面和均匀成分。重点是适合绿光和更长波长应用的高铟含量的 GaInN 量子阱。作为关键，需要控制超过 30% 的铟掺入量，以保持完全晶格匹配以及完全均匀和化学计量的生长。时间分辨光谱和光学增益光谱揭示了由于缺陷和本征复合造成的非辐射复合损失的影响。有关缺陷水平的直接信息是通过共振光电流噪声光谱获得的。将与研究小组的合作伙伴合作，将非极性方法与半极性和极性方法进行比较。