Preparation of Crystalline Ceramics using Solar Cell from Liquid Phase and Its Electrical Properties

采用化学浴沉积法制备了CdS和CdSe晶体。为了在玻璃衬底上制备CdS薄膜，需要在镉前驱体溶液中加入三乙醇胺和氨水。另一方面，在前驱体溶液中加入亚硫酸钠作为硒离子的稳定剂和二羧酸钠作为镉离子的络合剂，是制备结晶态CdSe颗粒的关键。CdS薄膜在可见光和暗光照射下的电导率和迁移率随着Cu掺杂量的增加而增加。在紫外光照射下，随着Cu含量的增加，电导率和迁移率下降。载流子浓度是恒定的，尽管添加的Cu掺杂剂和光的照射。在CdSe颗粒的情况下，样品中镉与硒的比例随着前体溶液中硒的浓度的增加而降低。原子比（Cd/Se）为1的CdSe的带隙能量为1.74eV，但原子比为2.3的CdSe的带隙能量为1.42eV。

Crystalline CdS and CdSe were prepared by chemical bath deposition. In order to prepare CdS films on glass substrates, the addition of triethanolamine together with ammonia into cadmium precursor solution was necessary. On the other hand, the preparation of crystalline CdSe particles was essential to add sodium sulfite as a stabilizing agent for selenium ions and sodium dicarboxylate as a complexing agent for cadmium ions into precursor solution. The electrical conductivity and the mobility of CdS films increased with the increase of Cu dopant under dark and visible light irradiation. Under ultraviolet radiation, however, it was found that the electrical conductivity and the mobility decreased with the increase of addition of Cu. The carrier concentration was constant, in spite of the addition of Cu dopant and the irradiation of light. In the case of CdSe particles, the ratio of cadmium to selenium in the samples decreased with an increase of the concentration.of selenourea in the precursor solutions. The band-gap energy of CdSe with an atomic ratio(Cd/Se) of 1 showed a value of 1.74eV, but that with the ratio of 2.3 gave a slightly smaller value of 1.42eV.