Preparation of Crystalline Ceramics using Solar Cell from Liquid Phase and Its Electrical Properties

液相太阳能电池晶体陶瓷的制备及其电性能

• 批准号: 09650929
• 负责人: YAMAMOTO Osamu
• 金额: $ 1.6万
• 依托单位: Kanagawa Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650929/
• 关键词: Conductivity; Deposition; Films; Particles; CdS; CdSe; 粒子

Crystalline CdS and CdSe were prepared by chemical bath deposition. In order to prepare CdS films on glass substrates, the addition of triethanolamine together with ammonia into cadmium precursor solution was necessary. On the other hand, the preparation of crystalline CdSe particles was essential to add sodium sulfite as a stabilizing agent for selenium ions and sodium dicarboxylate as a complexing agent for cadmium ions into precursor solution. The electrical conductivity and the mobility of CdS films increased with the increase of Cu dopant under dark and visible light irradiation. Under ultraviolet radiation, however, it was found that the electrical conductivity and the mobility decreased with the increase of addition of Cu. The carrier concentration was constant, in spite of the addition of Cu dopant and the irradiation of light. In the case of CdSe particles, the ratio of cadmium to selenium in the samples decreased with an increase of the concentration.of selenourea in the precursor solutions. The band-gap energy of CdSe with an atomic ratio(Cd/Se) of 1 showed a value of 1.74eV, but that with the ratio of 2.3 gave a slightly smaller value of 1.42eV.

采用化学浴沉积法制备了晶体cd和CdSe。为了在玻璃基底上制备CdS薄膜，必须在镉前驱体溶液中加入三乙醇胺和氨。另一方面，在前驱体溶液中加入亚硫酸钠作为硒离子的稳定剂和二羧酸钠作为镉离子的络合剂是制备CdSe结晶粒子的关键。在暗光和可见光照射下，随着Cu掺杂量的增加，CdS薄膜的电导率和迁移率均有所提高。在紫外辐射下，随着Cu添加量的增加，其电导率和迁移率下降。在添加Cu掺杂剂和光照射的情况下，载流子浓度不变。在CdSe颗粒中，样品中镉与硒的比值随着浓度的增加而降低。硒脲在前体溶液中的含量。Cd/Se原子比为1的CdSe的能带能为1.74eV，而Cd/Se原子比为2.3的能带能略小，为1.42eV。

项目成果

O.Yamamoto: "Preparation of Crystalline CdSe Particles by Chemical Bath Deposition" J.Mater.Res.13巻・12号. 3394-3398 (1998)

O. Yamamoto：“通过化学浴沉积制备结晶 CdSe 颗粒”，J. Mater，第 13 卷，第 12 期。3394-3398 (1998)

O.Yamamoto: "Preparation of Crystalline CdSe Partieles by Chemical Bath Deposition" J.Mater.Res.13. 3394-3398 (1998)

O.Yamamoto：“通过化学浴沉积制备结晶 CdSe 颗粒”J.Mater.Res.13。

山本修: "Chemical Bath法による銅添加硫化カドミウム薄膜の合成とその電気特性" 日化誌. 1996巻・3号. 283-289 (1996)

Osamu Yamamoto：“化学浴法合成铜掺杂硫化镉薄膜及其电性能” Nikka Journal 1996，第 3 期。283-289 (1996)

山本 修: "Chemical Bath法による銅添加硫化カドミウム薄膜の合成とその電気特性" 日本化学会誌. 1996. 283-289 (1996)

Osamu Yamamoto：“化学浴法合成铜掺杂硫化镉薄膜及其电性能”日本化学学会学报1996年。283-289（1996）。

O.YAMAMOTO: "Preparation of Crystalline CdSe Particles by Chemical Bath Deposition" J.Mater.Res. (In Press).

O.YAMAMOTO：“通过化学浴沉积制备结晶 CdSe 颗粒”J.Mater.Res。