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Ultrasonic Microspectroscopy for High-Precision Surface Characterization of Substrates for Electronics Devices

用于电子设备基材高精度表面表征的超声波显微光谱

基本信息

批准号：
09450120
负责人：
KUSHIBIKI Jun-ichi
金额：
$ 8.96万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450120/
关键词：
Ultrasonic microspectroscopy Line-focus-beam acoustic microscopy V(z) curve analysis Leaky surface acoustic wave velocity Electronics materials Device fabrication process Layered structures Acoustic inhomogeneity 漏洩弾性表面波半導体材料評価

项目摘要

Ultrasonic microspectroscopy technology, using the line-focus-beam (LFB) and plane-wave ultrasonic material characterization system, has been applied to resolve material problems concerned with single crystal substrate (LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, Si, GaAs) for electronic devices and with proton-exchanged, implanted layers, epitaxial or amorphous films on the substrates used in the device fabrication processes.1. The reliable LFB system with high accuracy in leaky surface-acoustic-wave (LSAW) velocity measured on the water-loaded specimen surface has been established for accurate and efficient characterization of material properties, by developing a temperature-controlled pure water supply system and a sample transfer system. For the system calibration, the standard specimens of GGG, Si, Ge, LiNbOィイD23ィエD2, and LiTaOィイD23ィエD2 has been developed.2. A method of super-precision measurements of lattice parameters by the X-ray diffractometer using the Bond method has been developed, resulting in a very high accuracy of Δd/d<10ィイD1-6ィエD1 for a wide Bragg angle range.3. To eliminate a serious problem of the back reflection effect, occurring for thin specimens such as wafer substrates, a moving average method to obtain a true velocity from apparent LSAW velocities measured as a function of frequency and an approximated correction method useful for a number of measurement points have been developed.4. A method of evaluating single crystals such as LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, and GaAs by the LFB system has been established.5. A method of evaluating and selecting LiNbOィイD23ィエD2 and LiTaOィイD23ィエD2 substrates for SAW devices by the LFB system has been established.6. A method of analyzing and evaluating proton-exchanged layers on Z-cut LiTaOィイD23ィエD2 crystal substrates and ion-implanted layers on Si crystal substrates has been developed and demonstrated.

超声显微镜技术,使用line-focus-beam(局部反馈)和平面波超声材料表征系统,已应用于解决材料问题关心的单晶衬底(LiNbOィイc15ィエD2, LiTaOィイc15ィエD2,硅,砷化镓)与”其本身就具有交换质子、电子设备和植入层,外延或无定形基质用于设备上的电影制造processes.1。通过开发温控纯水供应系统和样品传输系统，建立了可靠的LFB系统，在水载试样表面测量泄漏表面声波（LSAW）速度，以准确有效地表征材料特性。系统的校准,GGG的标准样本,如果,通用电气,LiNbOィイc15ィエD2,和LiTaOィイc15ィエD2 developed.2。本文提出了一种利用Bond方法对x射线衍射仪的晶格参数进行超精密测量的方法，在较宽的Bragg角范围内，测量精度达到Δd/d<10 μ l -6 μ l - D1。为了消除诸如晶片衬底之类的薄样品中出现的严重的背反射效应问题，研究人员开发了一种移动平均方法，通过测量的视LSAW速度作为频率的函数来获得真实速度，并开发了一种适用于许多测点的近似校正方法。建立了用LFB体系评价LiNbO γ γ γ γ、LiTaO γ γ γ γ和GaAs单晶的方法。建立了用LFB系统对SAW器件的LiNbO基片和LiTaO基片进行评价和选择的方法。本文提出并论证了一种分析和评价z -切割LiTaO - D23 - D2晶体基底上质子交换层和Si晶体基底上离子注入层的方法。