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Ultrasonic Microspectroscopy for High-Precision Surface Characterization of Substrates for Electronics Devices

用于电子设备基材高精度表面表征的超声波显微光谱

基本信息

批准号：
09450120
负责人：
KUSHIBIKI Jun-ichi
金额：
$ 8.96万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450120/
关键词：
Ultrasonic microspectroscopy Line-focus-beam acoustic microscopy V(z) curve analysis Leaky surface acoustic wave velocity Electronics materials Device fabrication process Layered structures Acoustic inhomogeneity 漏洩弾性表面波半導体材料評価

项目摘要

Ultrasonic microspectroscopy technology, using the line-focus-beam (LFB) and plane-wave ultrasonic material characterization system, has been applied to resolve material problems concerned with single crystal substrate (LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, Si, GaAs) for electronic devices and with proton-exchanged, implanted layers, epitaxial or amorphous films on the substrates used in the device fabrication processes.1. The reliable LFB system with high accuracy in leaky surface-acoustic-wave (LSAW) velocity measured on the water-loaded specimen surface has been established for accurate and efficient characterization of material properties, by developing a temperature-controlled pure water supply system and a sample transfer system. For the system calibration, the standard specimens of GGG, Si, Ge, LiNbOィイD23ィエD2, and LiTaOィイD23ィエD2 has been developed.2. A method of super-precision measurements of lattice parameters by the X-ray diffractometer using the Bond method has been developed, resulting in a very high accuracy of Δd/d<10ィイD1-6ィエD1 for a wide Bragg angle range.3. To eliminate a serious problem of the back reflection effect, occurring for thin specimens such as wafer substrates, a moving average method to obtain a true velocity from apparent LSAW velocities measured as a function of frequency and an approximated correction method useful for a number of measurement points have been developed.4. A method of evaluating single crystals such as LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, and GaAs by the LFB system has been established.5. A method of evaluating and selecting LiNbOィイD23ィエD2 and LiTaOィイD23ィエD2 substrates for SAW devices by the LFB system has been established.6. A method of analyzing and evaluating proton-exchanged layers on Z-cut LiTaOィイD23ィエD2 crystal substrates and ion-implanted layers on Si crystal substrates has been developed and demonstrated.

超声显微光谱技术，使用线聚焦束（LFB）和平面波超声材料表征系统，已被应用于解决与电子器件的单晶衬底（LiNbO掺杂D23单晶D2，LiTaO掺杂D23单晶D2，Si，GaAs）以及器件制造过程中使用的衬底上的质子交换、注入层、外延或非晶膜有关的材料问题.通过开发温控纯水供应系统和样品传输系统，建立了可靠的LFB系统，该系统具有高精度的漏声表面波（LSAW）速度测量的水加载试样表面上的材料性能的准确和有效的表征。研制了GGG、Si、Ge、LiNbO铌酸锂D23铌酸锂D2和LiTaO钽酸锂D23铌酸锂D2标准样品，用于系统的标定.提出了一种利用X射线衍射仪用Bond法超精密测量点阵参数的方法，在宽的布喇格角范围内，获得了Δd/d<10 μ m D1-6 μ m D1的高精度.为了消除背反射效应的严重问题，发生薄试样，如晶片基板，移动平均法，以获得一个真正的速度从表观LSAW速度测量作为频率的函数和近似校正方法有用的测量点的数量已经开发。建立了用LFB系统评价LiNbO_（23）Nd_（23）Nd_（23）Nd_（23）D_2、LiTaO_（23）Nd_（23）Nd_（23）D_2和GaAs单晶的方法.建立了利用LFB系统评价和选择声表面波器件用LiNbO_（23）Nd_（23）Nd_（22）D_2和LiTaO_（23）Nd_（23）Nd_（22）D_2基片的方法.本文提出了一种分析和评价Z切LiTaO_（23）LiTaO_（23）D_2晶体衬底上质子交换层和Si晶体衬底上离子注入层的方法。