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Ultrasonic Microspectroscopy for High-Precision Surface Characterization of Substrates for Electronics Devices

用于电子设备基材高精度表面表征的超声波显微光谱

基本信息

批准号：
09450120
负责人：
KUSHIBIKI Jun-ichi
金额：
$ 8.96万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450120/
关键词：
Ultrasonic microspectroscopy Line-focus-beam acoustic microscopy V(z) curve analysis Leaky surface acoustic wave velocity Electronics materials Device fabrication process Layered structures Acoustic inhomogeneity 漏洩弾性表面波半導体材料評価

项目摘要

Ultrasonic microspectroscopy technology, using the line-focus-beam (LFB) and plane-wave ultrasonic material characterization system, has been applied to resolve material problems concerned with single crystal substrate (LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, Si, GaAs) for electronic devices and with proton-exchanged, implanted layers, epitaxial or amorphous films on the substrates used in the device fabrication processes.1. The reliable LFB system with high accuracy in leaky surface-acoustic-wave (LSAW) velocity measured on the water-loaded specimen surface has been established for accurate and efficient characterization of material properties, by developing a temperature-controlled pure water supply system and a sample transfer system. For the system calibration, the standard specimens of GGG, Si, Ge, LiNbOィイD23ィエD2, and LiTaOィイD23ィエD2 has been developed.2. A method of super-precision measurements of lattice parameters by the X-ray diffractometer using the Bond method has been developed, resulting in a very high accuracy of Δd/d<10ィイD1-6ィエD1 for a wide Bragg angle range.3. To eliminate a serious problem of the back reflection effect, occurring for thin specimens such as wafer substrates, a moving average method to obtain a true velocity from apparent LSAW velocities measured as a function of frequency and an approximated correction method useful for a number of measurement points have been developed.4. A method of evaluating single crystals such as LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, and GaAs by the LFB system has been established.5. A method of evaluating and selecting LiNbOィイD23ィエD2 and LiTaOィイD23ィエD2 substrates for SAW devices by the LFB system has been established.6. A method of analyzing and evaluating proton-exchanged layers on Z-cut LiTaOィイD23ィエD2 crystal substrates and ion-implanted layers on Si crystal substrates has been developed and demonstrated.

利用线聚焦波束和平面波超声材料表征系统的超声显微光谱技术，已经被应用于解决电子器件用单晶衬底(LiNbOィイD23ィエD2，LiTaOィイD23ィエD2，Si，GaAs)的材料问题，以及在器件制造过程中使用的衬底上的质子交换、注入层、外延或非晶膜的材料问题。通过开发温控纯水供应系统和样品传输系统，建立了可靠的、高精度的在水样表面测量泄漏表面声波(LSAW)速度的LFB系统，以准确、高效地表征材料性能。为进行系统标定，研制了GGG、Si、Ge、LINBOィイD23ィエD2和丽涛ィイD23ィエD2标准样品。发展了一种用X射线衍射仪利用键合方法超精密测量晶格参数的方法，在很宽的布拉格角范围内得到了非常高的精度：Δd/d&lt；10ィイd1-6ィエd1。为了消除硅片衬底等薄样品产生的背反射效应的严重问题，开发了一种从作为频率函数测量的LSAW表观速度获得真实速度的移动平均方法和适用于多个测量点的近似校正方法。建立了用LFB系统评价LiNbOィイD23ィエD2、LiTaOィイD23ィエD2和GaAs单晶的方法。建立了基于LFB系统的声表面波器件用LINBOィイD23ィエD2和LITOィイD23ィエD2衬底的评价和选择方法。提出了一种分析和评价Z切LiTaOィイD23ィエD2晶体衬底上的质子交换层和Si晶体衬底上的离子注入层的方法。