Ultrasonic Microspectroscopy for High-Precision Surface Characterization of Substrates for Electronics Devices
用于电子设备基材高精度表面表征的超声波显微光谱
基本信息
- 批准号:09450120
- 负责人:
- 金额:$ 8.96万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1997
- 资助国家:日本
- 起止时间:1997 至 1999
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Ultrasonic microspectroscopy technology, using the line-focus-beam (LFB) and plane-wave ultrasonic material characterization system, has been applied to resolve material problems concerned with single crystal substrate (LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, Si, GaAs) for electronic devices and with proton-exchanged, implanted layers, epitaxial or amorphous films on the substrates used in the device fabrication processes.1. The reliable LFB system with high accuracy in leaky surface-acoustic-wave (LSAW) velocity measured on the water-loaded specimen surface has been established for accurate and efficient characterization of material properties, by developing a temperature-controlled pure water supply system and a sample transfer system. For the system calibration, the standard specimens of GGG, Si, Ge, LiNbOィイD23ィエD2, and LiTaOィイD23ィエD2 has been developed.2. A method of super-precision measurements of lattice parameters by the X-ray diffractometer using the Bond method has been developed, resulting in a very high accuracy of Δd/d<10ィイD1-6ィエD1 for a wide Bragg angle range.3. To eliminate a serious problem of the back reflection effect, occurring for thin specimens such as wafer substrates, a moving average method to obtain a true velocity from apparent LSAW velocities measured as a function of frequency and an approximated correction method useful for a number of measurement points have been developed.4. A method of evaluating single crystals such as LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, and GaAs by the LFB system has been established.5. A method of evaluating and selecting LiNbOィイD23ィエD2 and LiTaOィイD23ィエD2 substrates for SAW devices by the LFB system has been established.6. A method of analyzing and evaluating proton-exchanged layers on Z-cut LiTaOィイD23ィエD2 crystal substrates and ion-implanted layers on Si crystal substrates has been developed and demonstrated.
利用线聚焦波束和平面波超声材料表征系统的超声显微光谱技术,已经被应用于解决电子器件用单晶衬底(LiNbOィイD23ィエD2,LiTaOィイD23ィエD2,Si,GaAs)的材料问题,以及在器件制造过程中使用的衬底上的质子交换、注入层、外延或非晶膜的材料问题。通过开发温控纯水供应系统和样品传输系统,建立了可靠的、高精度的在水样表面测量泄漏表面声波(LSAW)速度的LFB系统,以准确、高效地表征材料性能。为进行系统标定,研制了GGG、Si、Ge、LINBOィイD23ィエD2和丽涛ィイD23ィエD2标准样品。发展了一种用X射线衍射仪利用键合方法超精密测量晶格参数的方法,在很宽的布拉格角范围内得到了非常高的精度:Δd/d<;10ィイd1-6ィエd1。为了消除硅片衬底等薄样品产生的背反射效应的严重问题,开发了一种从作为频率函数测量的LSAW表观速度获得真实速度的移动平均方法和适用于多个测量点的近似校正方法。建立了用LFB系统评价LiNbOィイD23ィエD2、LiTaOィイD23ィエD2和GaAs单晶的方法。建立了基于LFB系统的声表面波器件用LINBOィイD23ィエD2和LITOィイD23ィエD2衬底的评价和选择方法。提出了一种分析和评价Z切LiTaOィイD23ィエD2晶体衬底上的质子交换层和Si晶体衬底上的离子注入层的方法。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
J.Kushibiki and T.Okuzawa: "Line-Focus-Beam Acoustic Microscopy Detection of Variations of Growing Conditions of LiTaO_3 Crystals"Jpn.J.Appl.Phys.. 38・8B. L964-L966 (1999)
J.Kushibiki 和 T.Okuzawa:“LiTaO_3 晶体生长条件变化的线聚焦声学显微镜检测”Jpn.J.Appl.Phys.. 38・8B (1999)。
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J.Kushibiki and Y.Ohashi: "Theoretical and Experimental Considerations on Line-focus-Beam Acoustic Microscopy for Thin Specimens" Jpn.J.Appl.Phys.(in press). (1999)
J.Kushibiki 和 Y.Ohashi:“薄样品线聚焦束声学显微镜的理论和实验考虑”Jpn.J.Appl.Phys.(出版中)。
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J. Kushibiki, Y. Ohashi, and M. Arakawa: "Influence of reflected waves from the back surface of thin solid-plate-specimen on velocity measurements by line-focus-beam acoustic microscopy"IEEE Trans. UFFC. Vol. 47, No. 1. 274-284 (2000)
J. Kushibiki、Y. Ohashi 和 M. Arakawa:“薄固体板样本背面反射波对线聚焦光束声学显微镜速度测量的影响”IEEE Trans。
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Y. Ono and J. Kushibiki: "Experimental study of construction mechanism of V(z) curves obtained y line-focus-beam acoustic microscopy"IEEE Trans. UFFC.. (in press). (2000)
Y. Ono 和 J. Kushibiki:“通过 y 线聚焦光束声学显微镜获得的 V(z) 曲线构建机制的实验研究”IEEE Trans。
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- 影响因子:0
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A.Tourlog, J.D.Achenbach, and J.Kushibiki: "Line-focus acoustic microscopy measurements of acoustic properties of LiTaO_3 crystal plates with an inversion layer" J.Appl.Phys.81・10. 6616-6621 (1997)
A.Tourlog、J.D.Achenbach 和 J.Kushibiki:“具有反型层的 LiTaO_3 晶体板的声学特性的线聚焦声学显微镜测量”J.Appl.Phys.81・10 (1997)。
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KUSHIBIKI Jun-ichi其他文献
KUSHIBIKI Jun-ichi的其他文献
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{{ truncateString('KUSHIBIKI Jun-ichi', 18)}}的其他基金
Development of an optical cavity with residual strain free for optical frequency standards
开发符合光频率标准的无残余应变光学腔
- 批准号:
25630167 - 财政年份:2013
- 资助金额:
$ 8.96万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Evaluation of glass thin films by the ultrasonic microspectroscopy technology
超声显微光谱技术评价玻璃薄膜
- 批准号:
23656260 - 财政年份:2011
- 资助金额:
$ 8.96万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Ultrasonic Microspectroscopy of Wide Bandgap Semiconductor Materials
宽带隙半导体材料的超声显微光谱
- 批准号:
23246075 - 财政年份:2011
- 资助金额:
$ 8.96万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Ultrasonic Microspectroscopy of Ultra-High-Quality Synthetic a-Quartz
超高品质合成 a-石英的超声波显微光谱
- 批准号:
13555085 - 财政年份:2001
- 资助金额:
$ 8.96万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of a Method to Evaluate the Surface of Single Crystal Substrates for Super-High-Frequency SAW Devices by UMS Technology
利用 UMS 技术开发评估超高频 SAW 器件单晶衬底表面的方法
- 批准号:
12450119 - 财政年份:2000
- 资助金额:
$ 8.96万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of Ultrasonic Microspectroscopy for Characterization of Layered and Damaged Surfaces on Single Crystal Substrates
用于表征单晶基底上的层状和损伤表面的超声波显微光谱学的发展
- 批准号:
10555099 - 财政年份:1998
- 资助金额:
$ 8.96万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Precise Determination of Acoustical Physical Constants of LiNbO_3 and LiTaO_3 Single Crystals
LiNbO_3和LiTaO_3单晶声学物理常数的精确测定
- 批准号:
07455127 - 财政年份:1995
- 资助金额:
$ 8.96万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Ultrasonic Microspectroscopy of LiTaO_3 Single Crystals for Optoelectronic Devices
光电器件用LiTaO_3单晶的超声显微光谱
- 批准号:
07555408 - 财政年份:1995
- 资助金额:
$ 8.96万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
相似海外基金
Development and evaluation of optical-use MgO : LiNbO_3 single crystals by line-focus-beam acoustic microscopy
光学用MgO:LiNbO_3单晶的开发和线聚焦声学显微镜评价
- 批准号:
04555063 - 财政年份:1992
- 资助金额:
$ 8.96万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Development of Line-Focus-Beam Acoustic Microscopy System for Evaluation of Electronic Device Materials
用于评估电子器件材料的线聚焦声学显微镜系统的开发
- 批准号:
01850058 - 财政年份:1989
- 资助金额:
$ 8.96万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B).