Ultrasonic Microspectroscopy for High-Precision Surface Characterization of Substrates for Electronics Devices

超声波显微镜技术，使用线焦点光束（LFB）和平面波超声波材料表征系统，已应用于与单个晶体基板（LiNbO L23 L23 L23 L2 Si， GaAs）解决电子设备问题，并在设备制造过程中使用的原始交换、植入层、外延或非正态薄膜上应用于基板解决材料问题。一种可靠的LFB系统，其在泄漏表面-声学-波（LSAW）中具有高准确性的速度测量了水加载的特定表面已被用于材料属性的准确性和有效性特征，并通过开发一个温度控制的纯水供应系统和一个样本传输系统。For the system calibration， the standard specimens of GGG， Si， Ge， LiNbO y D23 y D2， and LiTaO y D23 y D2 has been developed. 2。用X射线差测仪对晶格参数的超精确测量方法已经开发出来，结果在Δd/d<10 y D1-6 y D1的宽布拉格角度范围内具有很高的准确性。为了消除反向反射效应的严重问题，将瘦物质用作晶圆基，并采用一种移动平均方法，可以从特定LSAW频率中获得一种真实的速度作为频率的功能和一种接近的校正方法，用于开发出的大量测量点。A method of evaluating single crystals such as LiNbOイイD23イエD2， LiTaOイD23イエD2， and GaAs by the LFB system has been established. 5。A method of evaluating and selecting LiNbOイイD23イD2 and LiTaOイD23イD2 substrates for SAW devices by the LFB system has been established. 6。A method of analyzing and evaluating proton-exchanged layers on Z-cut LiTaOイイD23イエD2 cr\substrates and ion-implanted layers on Si cr\substrates has been developed and demonstrated。

Ultrasonic microspectroscopy technology, using the line-focus-beam (LFB) and plane-wave ultrasonic material characterization system, has been applied to resolve material problems concerned with single crystal substrate (LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, Si, GaAs) for electronic devices and with proton-exchanged, implanted layers, epitaxial or amorphous films on the substrates used in the device fabrication processes.1. The reliable LFB system with high accuracy in leaky surface-acoustic-wave (LSAW) velocity measured on the water-loaded specimen surface has been established for accurate and efficient characterization of material properties, by developing a temperature-controlled pure water supply system and a sample transfer system. For the system calibration, the standard specimens of GGG, Si, Ge, LiNbOィイD23ィエD2, and LiTaOィイD23ィエD2 has been developed.2. A method of super-precision measurements of lattice parameters by the X-ray diffractometer using the Bond method has been developed, resulting in a very high accuracy of Δd/d<10ィイD1-6ィエD1 for a wide Bragg angle range.3. To eliminate a serious problem of the back reflection effect, occurring for thin specimens such as wafer substrates, a moving average method to obtain a true velocity from apparent LSAW velocities measured as a function of frequency and an approximated correction method useful for a number of measurement points have been developed.4. A method of evaluating single crystals such as LiNbOィイD23ィエD2, LiTaOィイD23ィエD2, and GaAs by the LFB system has been established.5. A method of evaluating and selecting LiNbOィイD23ィエD2 and LiTaOィイD23ィエD2 substrates for SAW devices by the LFB system has been established.6. A method of analyzing and evaluating proton-exchanged layers on Z-cut LiTaOィイD23ィエD2 crystal substrates and ion-implanted layers on Si crystal substrates has been developed and demonstrated.