Underpinning Power Electronics 2012: Devices Theme

2012 年电力电子基础：设备主题

• 批准号: EP/L007010/1
• 负责人: Phil Mawby
• 金额: $ 251.98万
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2013
• 资助国家: 英国
• 起止时间: 2013 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FL007010%2F1
• 关键词: Underpinning; Power; Electronics; 2012; Devices

This programme is part of the EPSRC project on Underpinning power electronics. It is one of four main research themes supporting the centre (along with integrated components, Converters and Integrated Drives) and focuses on the basic building block of power electronics, namely the semiconductor components. The aim is to enable a step-change in the state of the art. By enabling the development of new technology, gaining deeper theoretical insight into the physics of failure, building predictive reliability models and compact models, this programme will be of direct benefit to the central hub and the other themes as well as supporting and stimulating UK manufacturing industries in the area of power electronics and providing internationally leading research output.

该计划是EPSRC电力电子基础项目的一部分。它是支持该中心的四个主要研究主题之一（沿着与集成组件，转换器和集成驱动器），并专注于电力电子的基本构建模块，即半导体组件。其目的是实现最新技术的飞跃。通过开发新技术、对故障物理学获得更深入的理论见解、构建预测可靠性模型和紧凑模型，该计划将直接有利于中心枢纽和其他主题，支持和刺激英国电力电子领域的制造业，并提供国际领先的研究成果。

项目成果

Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling

• DOI: 10.1109/ecce.2014.6953427
• 发表时间: 2014-11
• 期刊: 2014 IEEE Energy Conversion Congress and Exposition (ECCE)
• 作者: R. Bonyadi;O. Alatise;S. Jahdi;J. Hu;L. Evans;P. Mawby

Monitoring Air Pollution in Greek Urban Areas During the Lockdowns, as a Response Measure of SARS-CoV-2 (COVID-19).

作为 SARS-CoV-2 (COVID-19) 的应对措施，在封锁期间监测希腊城市地区的空气污染。

• DOI: 10.1007/978-3-030-69306-0_13
• 发表时间: 2023
• 期刊: Water, air, and soil pollution
• 作者: Avdoulou MM

Modeling power converters using hard switched silicon carbide MOSFETs and Schottky barrier diodes

使用硬开关碳化硅 MOSFET 和肖特基势垒二极管对电源转换器进行建模

• DOI: 10.1109/epe.2013.6631758
• 发表时间: 2013
• 作者: Alexakis P

Progress in Engineering Technology II

工程技术进展二

• DOI: 10.1007/978-3-030-46036-5_12
• 发表时间: 2020
• 作者: Arof S

Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

AlGaN/GaN 高电子迁移率晶体管断态退化的时间演化

• DOI: 10.1063/1.4881637
• 发表时间: 2014
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Bajo M