Development of low-voltage and low-power mixed-signal ICs using nano-scale multiple gate field-effect transistors
Development of low-voltage and low-power mixed-signal ICs using nano-scale multiple gate field-effect transistors
批准号:
342879-2012
负责人:
ElSankary, Kamal
金额:
$1.31万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2012
资助国家:
加拿大
项目状态:
已结题
起止时间:
2012-01-01 至 2013-12-31
中文摘要
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英文摘要
The low-power and cost-effective Complementary Metal-Oxide-Semiconductor (CMOS) devices have forced the analog designers to develop integrated circuits (ICs) using digital CMOS technologies. Conventional nano-scale planar CMOS devices suffer from undesirable short-channel effects, such as high drain induced barrier lowering, substantial leakage currents due to threshold voltage roll-off, lower intrinsic gain, lower output impedance, lower dynamic range and poorer device matching. These non-idealities eventually degrade the performance of CMOS devices and pose a serious threat to ICs' performance.
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资助金额:$1.31万
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资助金额:$1.31万
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资助金额:$1.64万
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依托单位:
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