Ultrahigh-efficiency phosphor-free InGaN/GaN Dot-in-a-wire white light emitting diodes monolithically grown on silicon

在硅上单片生长的超高效率无磷 InGaN/GaN 线状白光发光二极管

• 批准号: 413560-2011
• 负责人: Mi, Zetian
• 金额: $ 11万
• 依托单位: McGill University
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2012
• 资助国家: 加拿大
• 起止时间: 2012-01-01 至 2013-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=515709
• 关键词: Ultrahigh; efficiency; phosphor; free; InGaN

Making lighting more efficient represents one of the biggest challenges we face today. Solid state lighting, with the employment of LEDs, is well positioned to displace conventional lighting technologies, including fluorescent and high-intensity discharge lighting. However, the current solid state lamps rely on the use of phosphor coatings, which significantly increases the manufacturing cost and comprises the color rendering capability. In this project, we propose to develop ultrahigh efficiency phosphor-free white LEDs, with the objective to achieve an internal quantum efficiency of >80% and negligible efficiency droop. This project is solidly based on our recent achievement of InGaN/GaN dot-in-a-wire nanoscale heterostructures on Si

提高照明效率是我们今天面临的最大挑战之一。采用LED的固态照明很好地定位于取代传统照明技术，包括荧光和高强度放电照明。然而，目前的固态灯依赖于磷光体涂层的使用，这显著增加了制造成本并且包括显色能力。在这个项目中，我们建议开发高效率无磷白色LED，目标是实现>80%的内部量子效率和可忽略的效率下降。这个项目是基于我们最近在硅上的InGaN/GaN线中点纳米异质结构的成果