An Integrated Smart Power Harvesting Scheme from High Throughput Data Lines
An Integrated Smart Power Harvesting Scheme from High Throughput Data Lines
批准号:
463394-2014
负责人:
Sawan, Mohamad
金额:
$14.13万
依托单位国家:
加拿大
项目类别:
Strategic Projects - Group
财政年份:
2015
资助国家:
加拿大
项目状态:
已结题
起止时间:
2015-01-01 至 2016-12-31
中文摘要
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英文摘要
In a wired sensor network, safe and reliable data communications between sensors and control units, and procuring energy to them involve bulky wiring bundles. On the other hand, significant idle period are expected in the data buses. Therefore, a promising means of saving and procuring power to sensors and their interfaces could be based on exploiting idle periods to distribute energy. the technique when implemented with wide bandgap and high voltage IC technologies can extend the application to those who are subject to harsh and high voltage environments.
Our goal is to introduce new power up techniques for wired networks, sensor networks in particular, where many lines carry data and power separately. The project aims at serving the benefits to a broad range of applications, which are subjected to simultaneous data and power transfer, notably found in aerospace. Each of these main subjects must contribute to define an appropriate architecture to facilitate reliable interconnection and
This project tackles solutions to introduce a power scavenging scheme from data lines to feed energy to peripherals in sensor networks. The research consists of the following complementary parts; a) development of a smart power management algorithm, b) investigation of the best means to combine data transfers and energy scavenging over a same medium, c) development of wide bandgap devices and their characterization, d) adaptation of the scheme to harsh environmental conditions such as high temperature, e) introduction of power efficient high voltage line (sine) driver for excitation signal generator path in sensor interfaces, and f) miniaturization and packaging of the circuits using COT and IC components. Here, standard and high-voltage CMOS, hybrid and wide bandgap technologies are involved.
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