MOST - Manufacturing and applications of GaN power semiconductor devices/modules

MOST - GaN功率半导体器件/模块的制造和应用

• 批准号: 521470-2018
• 负责人: Ng, WaiTung
• 金额: $ 14.61万
• 依托单位: University of Toronto
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2019
• 资助国家: 加拿大
• 起止时间: 2019-01-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=694557
• 关键词: MOST; Manufacturing; applications; GaN; power

This project is a joint research collaboration with Taiwan's National Nano Device Laboratories (NDL) and Dana Canada Corp. (Dana) on the design and fabrication techniques for liquid cooled Gallium Nitride (GaN) power modules for Hybrid Electric and pure Electric Vehicles (HEVs and EVs).GaN power devices are an emerging technology that can outperform the current state-of-the-art silicon based power MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) due to their superior material properties. These include higher critical field, higher electron saturation velocity, and higher mobility in the form of a 2-dimensional electron gas (2DEG) channel. A significant breakthrough that makes GaN power technology attractive is the low-cost technique to grow AlGaN/GaN layers on large size silicon substrates. Further cost-reduction is also promised by the potential to manufacture these power devices at established silicon foundries. The primary application for GaN power transistors is in the implementation of compact and high efficiency power converters for HEVs and EVs. While the wide bandgap material has the added ability to operate in high temperature environment, thermal management of the power converters/drive trains remains a critical challenge in the automotive industry.This project has three major components: the design and fabrication of high performance and reliable GaN power transistors; the design and implementation of integrated circuits (ICs) to provide intelligent interface and driving for the GaN power transistors (and also IGBTs); the development of low-cost manufacturing process for the production of liquid cooled GaN/IGBT power modules (an integral assembly of multiple power transistors, multiple interface/driving ICs, circuit board, and the aluminum cooling plate). This work will enable Dana to produce the critical power electronic parts for the assembly of compact, reliable and high efficiency power converters for the motor drive in HEVs/EVs.

该项目是与台湾国家纳米器件实验室(NDL)和达纳加拿大公司(DANA)共同研究的混合动力汽车和纯电动汽车(HEV和EV)用液冷GaN(GaN)功率模块的设计和制造技术。GaN功率器件是一项新兴技术，由于其优越的材料特性，可以超越当前最先进的硅基功率MOSFET和绝缘栅双极晶体管(IGBT)。这些包括更高的临界场，更高的电子饱和速度，以及以二维电子气(2DEG)通道形式的更高的迁移率。使GaN功率技术具有吸引力的一个重大突破是在大尺寸硅衬底上生长AlGaN/GaN层的低成本技术。在老牌硅铸造厂制造这些电力设备的潜力也有望进一步降低成本。GaN功率晶体管的主要应用是实现用于混合动力汽车和电动汽车的紧凑和高效的功率转换器。虽然宽禁带材料具有在高温环境下工作的额外能力，但功率转换器/驱动系统的热管理仍然是汽车行业的一个关键挑战。该项目包括三个主要部分：高性能和可靠的GaN功率晶体管的设计和制造；为GaN功率晶体管(以及IGBT)提供智能接口和驱动的集成电路(IC)的设计和实现；用于生产液冷GaN/IGBT功率模块的低成本制造工艺的开发(多个功率晶体管、多个接口/驱动IC、电路板和铝散热板的整体组装)。这项工作将使戴纳公司能够生产关键的电力电子部件，用于组装用于混合动力汽车/电动汽车的电机驱动的紧凑、可靠和高效的功率转换器。