CMOS Process Sensors and Design Methodology in Advanced Technology Nodes
CMOS Process Sensors and Design Methodology in Advanced Technology Nodes
批准号:
543852-2019
负责人:
Ng, WaiTung
金额:
$8.41万
依托单位:
依托单位国家:
加拿大
项目类别:
Collaborative Research and Development Grants
财政年份:
2021
资助国家:
加拿大
项目状态:
已结题
起止时间:
2021-01-01 至 2022-12-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
FinFETs (Fin Field Effect Transistors) are the most advanced VLSI fabrication technology currently available. They are designed to extend the performance of CMOS technology beyond the Moore's law. The current VLSI product cycles are far shorter than the roll out of new generations of fabrication processes. FinFET circuit designers often have to start conceiving and designing new products before all the information in the process design kit (PDK) from the silicon foundry is ready. As a result, designers often have to perform a semi-blinded design, with the anticipation that the fabricated FinFET based VLSI prototypes will conform to the simulated performance. In this collaborative project with HiSilicon (a subsidiary of Huawei Canada), we will develop design techniques to enhance the chance of first time success for highly complex VLSI chips with billions of transistors and 100's man-year of development time/cost. We intend to fabricate VLSI prototypes on pre-released version of 7 nm FinFET technology (and later 5 nm) from Taiwan Semiconductor Manufacturing Company Limited (TSMC, the world's largest silicon foundry) for wireless telecommunication applications. In particular, this project has two main objectives. The first one is to improve the monitoring of the electrical characteristics of the FinFETs and peripheral components (e.g. capacitors, resistors, metal contacts, and metal interconnects, etc.) at on-chip level. The second objective is to develop process-tolerant circuit design techniques that can be self-adapted to any slight changes in device characteristics due to process variations and aging.Canada is the only G8 nations that does not have any mega-fab facility. However, we continue to be a world leader in nurturing fabless VLSI design houses, providing leading edge designs for global needs. The training of highly qualified personnel (HQP) with advanced VLSI design skills is essential to support the expanding electronics, communication and automotive industries in Canada.
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批准号:543852-2019
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项目类别:Collaborative Research and Development Grants
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资助金额:$8.41万
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财政年份:2020
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负责人:Ng, WaiTung
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依托单位:
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批准号:RGPIN-2019-04462
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.35万
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财政年份:2020
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负责人:Ng, WaiTung
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依托单位:
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批准号:RGPIN-2019-04462
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.35万
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财政年份:2019
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负责人:Ng, WaiTung
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依托单位:
CMOS Process Sensors and Design Methodology in Advanced Technology Nodes
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批准号:543852-2019
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项目类别:Collaborative Research and Development Grants
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资助金额:$8.41万
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负责人:Ng, WaiTung
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依托单位:
MOST - Manufacturing and applications of GaN power semiconductor devices/modules
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项目类别:Strategic Projects - Group
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负责人:Ng, WaiTung
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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财政年份:2018
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负责人:Ng, WaiTung
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依托单位:
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项目类别:Strategic Projects - Group
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财政年份:2018
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负责人:Ng, WaiTung
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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财政年份:2017
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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项目类别:Discovery Grants Program - Individual
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Simulation of in-circuit operation of OTP memory devices
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批准号:484186-2015
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2015
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负责人:Ng, WaiTung
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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批准号:RGPIN-2014-04556
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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财政年份:2015
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负责人:Ng, WaiTung
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Solid state circuit breaker investigation
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批准号:485835-2015
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2015
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负责人:Ng, WaiTung
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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批准号:RGPIN-2014-04556
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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负责人:Ng, WaiTung
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依托单位:
VLSI power management technology
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.35万
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财政年份:2013
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负责人:Ng, WaiTung
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依托单位:
Gate drive circuits for GaN power transistors
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批准号:452953-2013
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2013
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负责人:Ng, WaiTung
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依托单位:
VLSI power management technology
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批准号:183723-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.35万
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国内基金
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批准号:62306326
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磁转动超新星爆发中weak r-process的关键核反应
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