MOST - Manufacturing and applications of GaN power semiconductor devices/modules

MOST - GaN功率半导体器件/模块的制造和应用

• 批准号: 521470-2018
• 负责人: Ng, WaiTung
• 金额: $ 14.72万
• 依托单位: University of Toronto
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2020
• 资助国家: 加拿大
• 起止时间: 2020-01-01 至 2021-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=697102
• 关键词: MOST; Manufacturing; applications; GaN; power

This project is a joint research collaboration with Taiwan's National Nano Device Laboratories (NDL) and Dana Canada Corp. (Dana) on the design and fabrication techniques for liquid cooled Gallium Nitride (GaN) power modules for Hybrid Electric and pure Electric Vehicles (HEVs and EVs). GaN power devices are an emerging technology that can outperform the current state-of-the-art silicon based power MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) due to their superior material properties. These include higher critical field, higher electron saturation velocity, and higher mobility in the form of a 2-dimensional electron gas (2DEG) channel. A significant breakthrough that makes GaN power technology attractive is the low-cost technique to grow AlGaN/GaN layers on large size silicon substrates. Further cost-reduction is also promised by the potential to manufacture these power devices at established silicon foundries. The primary application for GaN power transistors is in the implementation of compact and high efficiency power converters for HEVs and EVs. While the wide bandgap material has the added ability to operate in high temperature environment, thermal management of the power converters/drive trains remains a critical challenge in the automotive industry. This project has three major components: the design and fabrication of high performance and reliable GaN power transistors; the design and implementation of integrated circuits (ICs) to provide intelligent interface and driving for the GaN power transistors (and also IGBTs); the development of low-cost manufacturing process for the production of liquid cooled GaN/IGBT power modules (an integral assembly of multiple power transistors, multiple interface/driving ICs, circuit board, and the aluminum cooling plate). This work will enable Dana to produce the critical power electronic parts for the assembly of compact, reliable and high efficiency power converters for the motor drive in HEVs/EVs.