Deep X-Ray Lithography for High Aspect Ratio Polymer Micro Structures

高深宽比聚合物微结构的深度 X 射线光刻

• 批准号: RGPIN-2019-06009
• 负责人: Achenbach, Sven
• 金额: $ 1.97万
• 依托单位: University of Saskatchewan
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2020
• 资助国家: 加拿大
• 起止时间: 2020-01-01 至 2021-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=714839
• 关键词: Deep; Ray; Lithography; Aspect; Ratio

Micro-electro-mechanical systems (MEMS) increasingly replace macroscopic devices for improved performance. Many MEMS processes to date are silicon-based and support a planar architecture. Extending the materials selection and increasing the structural height to enable a vertical-wall architecture would allow, e. g., higher throughput micro reactors or higher sensitivity micro sensors. Deep X-ray lithography (XRL) can theoretically produce such high quality polymer or metal microstructures. They can have a large structural height (up to millimeters) and optically smooth, vertical sidewalls. The aspect ratio, defined as the structural height relative to the minimum lateral dimensions, can exceed 100:1. XRL, however, requires synchrotron radiation from an electron storage ring and is an extremely complex process. Its full potential is far from being reached, and XRL therefore still remains a niche technology with limited availability. The overarching question of my research is how we can contribute to fundamental improvements of XRL process technologies to allow for widespread application in the fabrication of high quality micro devices. This drives my objectives over the next 5 years to innovate XRL processing by developing high quality and rapid prototyping XRL mask making processes, and to apply these capabilities in the microfabrication of advanced X-ray optical elements and radio frequency (RF) MEMS. To achieve these goals, we will use the world-unique capabilities of my lab SyLMAND, the Synchrotron Laboratory for Micro and Nano Devices at the Canadian Light Source in Saskatoon, which I had designed to overcome pre-existing bottlenecks in XRL process capabilities and which started operations last year. Pursuing our goals is also based on our recently developed disruptive new XRL mask fabrication technology to improve fabrication timelines and cost by about an order of magnitude. We will develop a high resolution XRL mask technology that increases the achievable lateral resolution and vertical structure height of our XRL devices by about an order of magnitude each. This is a precondition to innovate X-ray optical elements using XRL techniques to focus synchrotron radiation for analysis in basic science and technology. Applications areas of such ultra high aspect ratio refractive lenses and zone plates include environmental and biological sciences and material design. Another outcome will be the fabrication of vertical wall RF MEMS components where smooth, high aspect ratio sidewalls are utilized to collaboratively develop wireless devices. We will demonstrate an advanced integrated, compact mm-wave artificial antenna array suitable for the emerging 5G wireless application standard used in, e.g., next-generation cell phones. In executing this research program, 7 HQP will be trained to fill demand of experts in key technologies such as materials development and communications technologies.

微机电系统（MEMS）越来越多地取代宏观器件，以提高性能。迄今为止，许多MEMS工艺都是基于硅的，并且支持平面架构。扩展材料选择和增加结构高度以实现垂直壁结构将允许，例如，更高通量的微反应器或更高灵敏度的微传感器。深x射线光刻（XRL）理论上可以产生这种高质量的聚合物或金属微结构。它们可以有很大的结构高度（高达毫米）和光学光滑的垂直侧壁。纵横比，定义为结构高度相对于最小横向尺寸，可以超过100:1。然而，XRL需要来自电子存储环的同步辐射，并且是一个极其复杂的过程。XRL的全部潜力远未实现，因此它仍然是一种可用性有限的利基技术。