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Engineering Research Equipment Grant: Rapid Thermal Annealing Facility

Engineering Research Equipment Grant: Rapid Thermal Annealing Facility
工程研究设备补助金:快速热退火设备
批准号:
8505833
负责人:
Pallab Bhattacharya
金额:
$2.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1985
资助国家:
美国
项目状态:
已结题
起止时间:
1985-08-01 至 1986-07-31

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项目成果

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中文摘要
翻译
用非相干光对注入半导体进行短期退火 目前已被广泛使用。 这项研究关注 随着卤素灯快速热退火的建立 系统 该系统将用于正在进行的实验, 了解基本工艺及其优化和设备 捏造 后者既包括微波又包括光电 装置. 在实验室中使用这种系统将 在各个领域进行更广泛的研究。
英文摘要
Short-term annealing of implanted semiconductors using incoherent light sources is currently being widely used. This research is concerned with the establishment of a halogen lamp rapid thermal annealing system. The system will be used in ongoing experiments aimed at the understanding of the basic process and its optimization and in device fabrication. The latter includes both microwave and optoelectronic devices. The availability of such a system in the laboratory will enable more extensive studies in the various areas.
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会议论文
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Nanoscale (Sub-Wavelength) Rolled-Up Quantum Dot Lasers
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国内基金
海外基金
Research on Quantum Field Theory without a Lagrangian Description
  • 批准号:
    24ZR1403900
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    SATOSHI NAWATA
  • 依托单位:
Cell Research
Cell Research
Cell Research (细胞研究)