Optical Studies of Heterostructure Semiconductor Materials and Devices
Optical Studies of Heterostructure Semiconductor Materials and Devices
批准号:
8610803
负责人:
Pallab Bhattacharya
金额:
$63.53万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1986
资助国家:
美国
项目状态:
已结题
起止时间:
1986-09-15 至 1989-12-31
中文摘要
这项研究工作包括光通信方面的研究, 交换、信号处理和联想记忆的新领域 装置. 这部作品所涉及的基本物质问题 是该领域进一步发展的基础。 此外,本发明还提供了一种方法, 探讨一些问题的必要的基本认识和方法 这种人工制造的结构的性能以可靠的方式 需要适当的处理。
英文摘要
This research effort includes thrusts in optical communications, switching, signal processing, and the new area of associative memory devices. The fundamental material questions which this work addresses are at the basis of the further development of the field. In addition, the necessary basic understanding and methods of probing some of the properties of such artificially produced structures in reliable way need proper addressing.
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资助金额:$0.0万
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财政年份:2006
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资助金额:$28.0万
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财政年份:1999
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依托单位:
Investigation of Visible Light Emission From GaP/AlGaP Type II Heterostructures
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批准号:9705094
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:1997
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依托单位:
Quantum Dot Lasers for Long Wavelength Radiation
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批准号:9628973
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项目类别:Continuing Grant
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资助金额:$46.22万
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财政年份:1996
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依托单位:
A Study of Rare-Earth Doped Semiconductors and Novel Laser Structures
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批准号:9014069
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资助金额:$18.5万
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财政年份:1991
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依托单位:
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资助金额:$8.0万
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财政年份:1988
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依托单位:
Workshop on High Speed Optical Processes and Opto-ElectronicDevices Based on Compound Semiconductors
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批准号:8702815
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资助金额:$2.5万
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财政年份:1987
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依托单位:
Engineering Research Equipment Grant: Rapid Thermal Annealing Facility
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批准号:8505833
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项目类别:Standard Grant
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资助金额:$2.0万
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财政年份:1985
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依托单位:
A Study of Ion Implanted Compound Semiconductor Materials and Devices Activated by Rapid Thermal Annealing
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批准号:8408743
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资助金额:$22.17万
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财政年份:1984
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负责人:Pallab Bhattacharya
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依托单位:
海外基金