New Routes to Thin Films of Metal Nitrides

这个项目属于材料化学计划的范畴。研究人员将使用新的有机金属前驱体研究Al， Ga, In， Mo和Nb金属氮化物薄膜的化学气相沉积。不像以前的路线，使用氮或氨作为氮的来源，前驱体将利用活性氮部分，如叠氮化物。例如，初步结果表明，叠氮化二乙基铝在400摄氏度下沉积氮化铝薄膜。他们打算在更低的温度下以更大的选择性沉积氮化铝薄膜，他们的计划包括使用激光和等离子体诱导沉积以及热激活过程。本文将详细探讨前驱体的结构与薄膜的结构和性能之间的关系。一个特殊设计的反应器将用于通过质谱法检测气相中的反应性中间体。这些研究以及对整体沉积速率的评估将有助于更好地理解反应机理与薄膜性能之间的关系。

This project is in the area of the Materials Chemistry Initiative. The investigators will examine the chemical vapor deposition of thin films of metal nitrides of Al, Ga, In, Mo, and Nb using new organometallic precursors. Unlike previous routes, which employed Nitrogen or Ammonia as the source of the nitrogen, the precursors will make use of reactive nitrogen moieties such as azide. For instance, preliminary results have shown that diethylaluminum azide deposits an aluminum nitride thin film at 400 degrees C. It is intended that such species will lead to the nitride films at lower temperatures with greater selectivity, and their plans include the use of laser-and plasma-induced depositions along with the thermally activated processes. The relationship between the structure of the precursor and the structure and properties of the film will be explored in detail. A specially designed reactor will be used to detect reactive intermediates in the gas phase by mass spectrometry. These studies along with the evaluation of the overall rate of deposition will lead to a better understanding of the relationship between the mechanism of reaction and the properties of the thin film.