Chemical Vapor Deposition of Early Transition - Metal Nitrides

这项研究是由化学部特别项目办公室和国家科学基金会材料化学倡议下材料研究部的陶瓷和电子材料计划共同支持的。这项赠款下的研究集中于合成和使用新型无机和有机金属亚胺络合物的前体分子，用于化学气相沉积IV和V族过渡金属氮化物薄膜。这些分子有几个值得探索的特征，例如每个金属原子存在一个预制的金属-氮多个化学键，辅助官能团在4000摄氏度以下具有分解途径。使用电子探针进行微观化学分析，使用卢瑟福背散射进行化学成分深度剖析，使用俄歇电子能谱进行化学结合和化学分析，使用二次离子质谱学进行化学分析，使用光电子能谱进行化学结合，以及使用X射线衍射进行结晶学表征，来确定薄膜的结构和质量。第四族和第五族氮化物具有独特的性能组合，这使它们在技术上具有重要意义。然而，由于缺乏在高沉积速率和低温下应用高质量薄膜的加工技术，它们的应用受到限制。根据这笔赠款进行的研究将着重于前体化合物的发现和合成，这将使有机金属化学气相沉积这些氮化物在技术上可行。

This research is being jointly supported by the Office of Special Projects in the Chemistry Division and the Ceramics and Electronic Materials Program in the Division of Materials Research under the Materials Chemistry Initiative at the National Science Foundation. The research under this grant concentrates on the synthesis and use of novel precursor molecules of inorganic and organometallic imido complexes for chemical vapor deposition of Group IV and V transition metal nitride thin films. These molecules have several desirable features which will be explored, e.g. the presence of one preformed metal-nitrogen multiple chemical bond per metal atom, ancillary functional groups which have decomposition pathways at temperatures below 4000 centigrade. The structure and quality of the films are being determined using an electron microprobe for micro- chemical analysis, Rutherford Back-scattering for depth profiling of chemical composition, Auger electron spectroscopy for chemical bonding and chemical analysis, secondary ion mass spectroscopy for chemical analysis, photoelectron spectroscopy for chemical bonding, and x-ray diffraction for crystallographic characterization. The Group IV and V nitrides have unique combinations of properties that make them technologically important. However, their application is limited by the absence of processing techniques to apply thin films of high quality at high rates of deposition and low temperatures. The research being done under this grant will emphasize the discovery and synthesis of precursor compounds that will make organometallic chemical vapor deposition of these nitrides technologically feasible.