Fort Monmouth Interaction: Research on Optimization of a Whiskerless Mixer/Varactor Schottky Barrier Diode Structure for Application at Millimeter and Submillimeter Wavelengths

包含最高质量肖特基势垒二极管的毫米波接收器目前使用晶须接触器件。毫米波集成电路和平面阵列接收器的出现突显了对无须平面肖特基势垒器件的需求。目前，商业制造商生产的无须设备的电气性能远远低于最佳水平。在过去的一年里，弗吉尼亚大学的研究导致了一种新型的无晶须肖特基二极管的设计和制造，该二极管具有优异的直流和射频特性。这项研究的目的是继续研究用于100 GHz及以上信号频率的无晶须肖特基势垒混频二极管，其电学特性，包括辅助元件的值，将尽可能接近理论预测的电特性。这项研究计划将由弗吉尼亚大学半导体设备实验室和蒙茅斯堡电子技术和设备实验室联合开展。它将涉及利用分子束外延、电子束掩模产生离子注入、蒙茅斯堡的设施和弗吉尼亚大学现有的加工技术和加工设备来优化器件设计和制造技术。该项目将涉及1名硕士学生为期1年。

Millimeter wave receivers incorporating the highest quality Schottky barrier diodes presently utilize whisker contacted devices. The advent of millimeter wave integrated circuitry and planar array receivers underscores the requirement of a whiskerless, planar Schottky barrier device. At present, commercial manufacturers have produced whiskerless devices which have far less than optimum electrical characteristics. Research during the past year at the University of Virginia has resulted in the design and fabrication of a novel whiskerless Schottky diode with excellent DC and RF characteristics. The object of this proposed research is to continue work on the whiskerless Schottky barrier mixer diode for use at and above 100 GHz signal frequency which will have electrical characteristics, including parastic element values, as near as possible to those theoretically predicted. This research program will consist of a joint effort between the University of Virginia's Semiconductor Device Laboratory and the Fort Monmouth Electronic Technology and Devices Laboratory. It will involve optimization of device design and fabrication technology utilizing the MBE, electron beam mask generation ion implantation, and facilities at Fort Monmouth and the existing processing technologies and processing equipment at the University of Virginia. This project will involve 1 Masters student for a period of 1 year.