Electronic Structures of Amorphous Semiconductors

该研究项目旨在了解 非晶态中的亚稳电子态和结构态 半导体，它们的弛豫平衡和它们的 与结构和成分不均匀性的关系将是 通过制备多层氢化非晶 由不同厚度的硅层组成的硅 组合物或掺杂剂浓度，以优化 各种新的电子性能。 将探讨各种方法 为了进一步控制和改变场的电子性质， 诱导和光诱导的可逆结构变化。

The research project is aimed at understanding the nature of metastable electronic and structural states in amorphous semiconductors, their relaxation to equilibrium and their relation to structural and compositional heterogeneities will be controlled by preparing multilayered hydrogenated amorphous silicon that consist of ultrathin layers of different compositions or dopant concentrations in order to optimize a variety of new electronic properties. Methods will be explored to further control and modify the electronic properties of field- induced and photo-induced reversible structural changes.