Utilization of Oxygen Injection in OMCVD for III-V Electron c Materials (REU)

为期一年的研究，探索和开发III-V族的氧化工艺 在OMCVD系统中的半导体。 氧化可以 用于原位清洁或掩模生成的目的 选择性外延，利用不同的氧化和升华 各种III-V族化合物及其氧化物的温度。 原位 氧化物掩模的产生不仅减少了 选择性外延，而且还提供更好的外延氧化物 接口。 初步实验在一个改进的 具有额外氧气入口和排气口的反应室已被 非常有前途 该项目的成功开发将 为半导体加工（“全真空”）和半导体制造业创造新的收入 工艺）和III-V MOS器件。

A one-year study to explore and develop an oxidation process for III-V semiconductors in an OMCVD system is proposed. The oxidation can serve the purpose of either in-situ cleaning or mask generation for selective epitaxy, utilizing the different oxidation and sublimation temperatures of various III-V compounds and their oxides. In-situ oxide mask generation not only reduces the processing procedures for selective epitaxy but also provides better semiconductor-oxide interfaces. Preliminary experiments carried out in a modified reaction chamber with an additional oxygen inlet and exhaust has been extremely promising. Successful development of this project will create new revenues for both semiconductor processing ("all-vacuum" process) and III-V MOS devices.