Fabrication and Characterization of Selectively Contacted Dual Channel Switching Transistors Using III-V Modulation- Doped Heterostructures - Ft. Monmouth

本研究计划涉及III-V异质结构材料的mbe生长，以及基于相同材料的新型选择性接触双通道调制掺杂场效应晶体管的制造和表征。该研究将在PSU电子材料与加工中心（CEMP）和电子技术与设备实验室（ETDL）、美国陆军电子研究与发展司令部（位于新泽西州蒙茅斯堡）的合作安排下进行。这将是该项目在美国国家科学基金会和美国陆军联合研究计划下的第三年。一名在PI下工作的PSU高级研究生将继续利用ETDL的广泛微电子设备，与其技术人员合作，制造已确定的测试器件结构。研究工作将包括优化AlGaAs/GaAs异质结构层的生长、这种新型测试器件结构的晶圆制造及其电学表征。目的是确定这种新器件作为新型开关元件的工作机制和性能限制，并在横向和垂直方向上扩展对异质结构量子阱内二维载流子输运的基本理解。

This research proposal is concerned with the MBE-growth of III-V heterostructure material, and fabrication and characterization of a novel selectively contacted dual channel modulation-doped field-effect transistor based on the same material. The research will be carried out under a collaborative arrangement between the PSU Center for Electronic Materials and Processing (CEMP), and the Electronic Technology and Devices Laboratory (ETDL), U.S. Army Electronics Research and Development Command, Fort Monmouth, NJ. This effort will be the third year of continuation of this project under the joint NSF and U.S. Army Research Program. A PSU senior graduate student working under the PI will continue to utilize the extensive microelectronics facilities at the ETDL in collaboration with its technical staff for the fabrication of the identified test device structures. The research efforts will involve optimization of the AlGaAs/GaAs heterostructure layer growth, wafer fabrication of this new test device structures, and their electrical characterization. The aim is to determine the mechanism of operation and performance limitations of this new device as a novel switching component, and expand the basic understanding concerning 2-D carrier transport within a heterostructure quantum well both in laterl and vertical directions.