Electrochemical Atomic Layer Epitaxy

这一提议代表了一种室温生长/沉积半导体材料的新方法。该方法以电化学为基础，命名为ECALE--电化学原子层外延。以前已经通过电化学方法沉积了多晶材料；该项目将使用交替电沉积单分子层来尝试实现外延生长。将使用经过特殊处理和清洁的单晶衬底；衬底和沉积的薄膜将通过LEED、AES、HREELS和STM以及更常规的光学和电子显微镜进行表征。

This proposal represents a novel approach to room temperature growth/deposition of semiconductor materials. The method is based on electrochemistry, and is named ECALE--Electrochemical Atomic Layer Epitaxy. Polycrystalline materials have been deposited by electrochemical means previously; this project will employ alternated electrodeposition of monolayers in an attempt to achieve epitaxial growth. Specially processed and cleaned single crystal substrates will be used; the substrates and the deposited films will be characterized by LEED, AES, HREELS, and STM along with more routine optical and electron microscopy.