III-V Heterostructures on Silicon Substrates Prepared by OMCVD for Electronic and Photonic Applications

这个第二阶段的提案主要研究在硅（Si）上异质外延生长的III-V半导体材料。建议方法的可行性已在第一阶段(奖励编号：在此期间，Kopin评估了通过有机金属化学气相沉积在Si上异质外延生长的GaAs中形成的激光器。虽然该方法是可行的，但第一阶段的工作也表明需要进一步降低异质外延GaAs薄膜的缺陷密度；因此，拟议的第二阶段研究的目标是实现对生长机制的更好理解，可以应用于减少由晶格不匹配引起的位错的有害影响。为了更充分地解决这一研究问题的基本方面，我们提出了一个包括佛罗里达大学在内的合作项目。通过高水平的表征工作，我们将对材料和生长过程有更好的了解，最终导致缺陷密度在104 cm -2左右。

This Phase II proposal addresses research on III-V semiconductor materials grown heteroepitaxially on silicon (Si). The feasibility of the proposed approach was demonstrated in Phase I (Award No. ISI-8861448, during which Kopin evaluated lasers formed in GaAs grown heteroepitaxially on Si by organometallic chemical vapor deposition. Although the approach was found feasible, the Phase I work also demonstrated the need for further reduction in the defect density of the heteroepitaxial GaAs films; thus, the objective of the proposed Phase II research is the attainment of an improved understanding of growth mechanisms that can be applied to reduce the deleterious effects of dislocations arising from the lattice mismatch. To more fully address the fundamental aspects of this research problem, we propose a collaborative program involving the University of Florida. By with a high h level of characterization effort, we will develop an improved understanding of the materials and growth processes, leading ultimately to defect densities on the order of 104 cm -2.