Nanoscale Optoelectronics with Polarization and Bandgap Engineered Nitride Nanowire/Silicon Heterostructures

具有偏振和带隙工程氮化物纳米线/硅异质结构的纳米级光电器件

• 批准号: 0907583
• 负责人: Debdeep Jena
• 金额: $ 30万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-07-01 至 2013-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0907583&HistoricalAwards=false
• 关键词: Nanoscale; Optoelectronics; Polarization; Bandgap; Engineered

Technical. This project addresses growth and optoelectronic properties of optically active III-V Nitride nanowire semiconductor heterostructures on silicon substrates. Based on the fundamental studies and combination of polarization and bandgap engineering, demonstration of ultraviolet and visible light emitters and detectors integrated with silicon substrates is expected. Nanowires will be grown without foreign metal catalyst particles, and the underlying silicon substrate will be used to tunnel-inject holes into the III-V nitride nanowires that are difficult to dope p-type with traditional acceptor dopants. Through the wide range of bandgaps viable with AlInGaN alloys, multicolor detectors and emitters will be grown and characterized. A major part of the pro-ject involves structures where the nanowires do not need to be broken off (or 'harvested'), but to exploit the intrinsic structure to develop applications that are not easily achievable either with III-V nitride thin films, or with silicon alone. These hybrid heterostructures provide advantages of dissimilar materials without the constraint of lattice-matching. Non-Technical. The project addresses fundamental research issues in a topical area of electronic/photonic materials science having technological relevance. The project will involve undergraduate students during the academic semesters as well as the summer. Theoretically oriented students will be involved in the project at the level of simulations of band diagrams and device structures. Experimentally inclined students will be involved at the level of fabrication of nanowire/silicon devices and their characterization. They will work directly with graduate students and the PIs by attending meetings and presenting their work. Depending on the results, the undergraduate students will be encouraged to publish their work. The project will result in the training of graduate students in a forefront area of nanoelectronics. Additional to expanding the existing outreach programs that the PIs are managing, two new activities are proposed with a special focus on under-represented groups: 1) experimental demonstration of nanoscale scanning probe techniques at the Expanding Your Horizon workshops where young school girls gather for their early exposure to how science and technology are employed in various careers, and 2) re-search projects designed for women undergraduate students under the Dual Degree Program at St. Mary's College. The dissemination of research results by publications and presentations at conferences, and its inclusion in courses taught by the investigators will ensure the outreach of the research proposed to the widest possible audience.

技术。本项目研究硅衬底上光活性III-V型氮化物纳米线半导体异质结构的生长和光电子特性。在基础研究的基础上，结合极化工程和带隙工程，有望实现与硅衬底集成的紫外光和可见光发射器和探测器。纳米线将在没有外来金属催化剂颗粒的情况下生长，下面的硅衬底将用于在难以用传统受体掺杂剂掺杂p型的III-V型氮化物纳米线上隧穿注入孔。通过AlInGaN合金的广泛带隙，多色探测器和发射器将被生长和表征。该项目的一个主要部分涉及纳米线不需要断裂（或“收获”）的结构，而是利用其内在结构来开发应用，这些应用无论是III-V氮化物薄膜还是单独使用硅都不容易实现。这些杂化异质结构提供了不受晶格匹配约束的异质材料的优点。非技术。本项目旨在解决电子/光子材料科学中具有技术相关性的主题领域的基础研究问题。该项目将涉及学期和夏季的本科生。以理论为导向的学生将在带图和器件结构的模拟层面参与项目。实验倾向的学生将参与纳米线/硅器件的制造及其表征。他们将直接与研究生和pi合作，参加会议并展示他们的作品。根据结果，将鼓励本科生发表他们的作品。该项目将培养纳米电子学前沿领域的研究生。除了扩大公共服务机构管理的现有外联方案外，还提议开展两项新活动，特别关注代表性不足的群体：1)在“扩展你的视野”研讨会上进行纳米级扫描探针技术的实验演示，年轻的女学生聚集在这里，尽早了解科学和技术是如何在各种职业中应用的；2)为圣玛丽学院双学位项目下的女本科生设计的研究项目。通过出版物和会议报告传播研究成果，并将其纳入研究人员讲授的课程，将确保所提议的研究向尽可能广泛的受众推广。