Nanoscale Optoelectronics with Polarization and Bandgap Engineered Nitride Nanowire/Silicon Heterostructures

具有偏振和带隙工程氮化物纳米线/硅异质结构的纳米级光电器件

基本信息

  • 批准号:
    0907583
  • 负责人:
  • 金额:
    $ 30万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2009
  • 资助国家:
    美国
  • 起止时间:
    2009-07-01 至 2013-06-30
  • 项目状态:
    已结题

项目摘要

Technical. This project addresses growth and optoelectronic properties of optically active III-V Nitride nanowire semiconductor heterostructures on silicon substrates. Based on the fundamental studies and combination of polarization and bandgap engineering, demonstration of ultraviolet and visible light emitters and detectors integrated with silicon substrates is expected. Nanowires will be grown without foreign metal catalyst particles, and the underlying silicon substrate will be used to tunnel-inject holes into the III-V nitride nanowires that are difficult to dope p-type with traditional acceptor dopants. Through the wide range of bandgaps viable with AlInGaN alloys, multicolor detectors and emitters will be grown and characterized. A major part of the pro-ject involves structures where the nanowires do not need to be broken off (or 'harvested'), but to exploit the intrinsic structure to develop applications that are not easily achievable either with III-V nitride thin films, or with silicon alone. These hybrid heterostructures provide advantages of dissimilar materials without the constraint of lattice-matching. Non-Technical. The project addresses fundamental research issues in a topical area of electronic/photonic materials science having technological relevance. The project will involve undergraduate students during the academic semesters as well as the summer. Theoretically oriented students will be involved in the project at the level of simulations of band diagrams and device structures. Experimentally inclined students will be involved at the level of fabrication of nanowire/silicon devices and their characterization. They will work directly with graduate students and the PIs by attending meetings and presenting their work. Depending on the results, the undergraduate students will be encouraged to publish their work. The project will result in the training of graduate students in a forefront area of nanoelectronics. Additional to expanding the existing outreach programs that the PIs are managing, two new activities are proposed with a special focus on under-represented groups: 1) experimental demonstration of nanoscale scanning probe techniques at the Expanding Your Horizon workshops where young school girls gather for their early exposure to how science and technology are employed in various careers, and 2) re-search projects designed for women undergraduate students under the Dual Degree Program at St. Mary's College. The dissemination of research results by publications and presentations at conferences, and its inclusion in courses taught by the investigators will ensure the outreach of the research proposed to the widest possible audience.
技术上的。该项目研究了光学活性III-V氮化物纳米线半导体异质结在硅衬底上的生长和光电特性。在理论研究和偏振与带隙工程相结合的基础上,展望了与硅衬底集成的紫外光和可见光发射器和探测器的演示。纳米线将在没有外来金属催化剂颗粒的情况下生长,底层的硅衬底将被用于在III-V氮化物纳米线中隧道注入空穴,这些空穴很难用传统的受主掺杂p型掺杂。通过AlInGaN合金可实现的广泛带隙,多色探测器和发射器将被生长和表征。该项目的一个主要部分涉及的结构中,纳米线不需要被折断(或“收获”),而是利用内在结构来开发应用,而这些应用无论是使用III-V氮化物薄膜,还是单独使用硅都不容易实现。这些杂化异质结提供了不同材料的优点,而不受晶格匹配的限制。非技术性。该项目涉及具有技术相关性的电子/光子材料科学专题领域的基础研究问题。该项目将在学期和暑假期间吸引本科生参与。以理论为导向的学生将参与到带状图和器件结构模拟的项目中。倾向于实验的学生将参与纳米线/硅器件的制造及其表征的水平。他们将通过出席会议和介绍他们的工作,直接与研究生和私人投资经理合作。根据结果,将鼓励本科生发表他们的作品。该项目将培养纳米电子学前沿领域的研究生。除了扩大私人投资机构正在管理的现有外展计划外,还提议开展两项新活动,特别关注代表性不足的群体:1)在扩展你的地平线研讨会上进行纳米级扫描探头技术的实验演示,年轻的女学生聚集在一起,尽早接触到科学和技术是如何在各种职业中就业的;2)圣玛丽学院双学位计划下为女本科生设计的研究项目。通过出版物和在会议上的发言来传播研究成果,并将其纳入调查员讲授的课程,将确保将拟议的研究成果推广到尽可能广泛的受众。

项目成果

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Debdeep Jena其他文献

Two-dimensional semiconductors for transistors
用于晶体管的二维半导体
  • DOI:
    10.1038/natrevmats.2016.52
  • 发表时间:
    2016-08-17
  • 期刊:
  • 影响因子:
    86.200
  • 作者:
    Manish Chhowalla;Debdeep Jena;Hua Zhang
  • 通讯作者:
    Hua Zhang
Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs
  • DOI:
    10.1007/s11664-013-2841-3
  • 发表时间:
    2013-11-23
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Jorge A. Ferrer-Pérez;Bruce Claflin;Debdeep Jena;Mihir Sen;Ramakrishna Vetury;Donald Dorsey
  • 通讯作者:
    Donald Dorsey
Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers
GaN 缓冲层上生长的 InN 薄膜中多体费米能边缘奇点的证据
Growth windows of epitaxial NbN x films on c -plane sapphire and their structural and superconducting properties
c面蓝宝石外延NbN x 薄膜的生长窗口及其结构和超导性能
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
    J. Wright;Huili Grace;Debdeep Jena
  • 通讯作者:
    Debdeep Jena
スパッタアニールAlN上GaN/AlN 2次元正孔ガス構造の電気特性評価と微細構造解析
溅射退火AlN上GaN/AlN二维空穴气体结构的电性能评估和微观结构分析
  • DOI:
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    西村 海音;中西 悠太;林 侑介;藤平 哲也;Chaudhuri Reet;Cho Yongjin;Xing Huili (Grace);Debdeep Jena;上杉 謙次郎;三宅 秀人;酒井 朗
  • 通讯作者:
    酒井 朗

Debdeep Jena的其他文献

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{{ truncateString('Debdeep Jena', 18)}}的其他基金

I-Corps: Aluminum Nitride-based Power Transistors
I-Corps:氮化铝基功率晶体管
  • 批准号:
    1933825
  • 财政年份:
    2019
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
RAISE-TAQS: Integrated Room Temperature Single-Photon based Quantum-Secure LiFi Systems
RAISE-TAQS:集成室温单光子量子安全 LiFi 系统
  • 批准号:
    1839196
  • 财政年份:
    2018
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Polarization-Driven Electron-Hole Bilayers in Quantum Wells
量子阱中偏振驱动的电子空穴双层
  • 批准号:
    1710298
  • 财政年份:
    2017
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
EFRI NewLAW: Non-Reciprocal Wave Propagation Devices by Fermionic Emulation and Exceptional Point Physics
EFRI NewLAW:通过费米子仿真和异常点物理实现非互易波传播装置
  • 批准号:
    1741694
  • 财政年份:
    2017
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant
DMREF: Collaborative Research: Extreme Bandgap Semiconductors
DMREF:协作研究:极限带隙半导体
  • 批准号:
    1534303
  • 财政年份:
    2015
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
  • 批准号:
    1523356
  • 财政年份:
    2015
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
  • 批准号:
    1232191
  • 财政年份:
    2012
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Evaluation of Graphene Nanoribbons for Lateral Bandgap Engineered Devices
用于横向带隙工程器件的石墨烯纳米带的评估
  • 批准号:
    0802125
  • 财政年份:
    2008
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
CAREER: Dielectric Engineering of Quantum Wire Solids: Fundamentals to Applications
职业:量子线固体的介电工程:应用基础
  • 批准号:
    0645698
  • 财政年份:
    2007
  • 资助金额:
    $ 30万
  • 项目类别:
    Continuing Grant

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职业:控制可穿戴近红外光电器件的量子点固体的变形能力
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    2337974
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Collaborative Research: Design and Discovery of Entropy-Stabilized Perovskite Halides for Optoelectronics
合作研究:用于光电子学的熵稳定钙钛矿卤化物的设计和发现
  • 批准号:
    2421149
  • 财政年份:
    2024
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Design of Novel Heterostructures for Future Application in Optoelectronics using First Principle Simulations and Machine Learning
使用第一原理模拟和机器学习设计用于未来光电子学应用的新型异质结构
  • 批准号:
    24K17615
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Collaborative Research: DMREF: Deep learning guided twistronics for self-assembled quantum optoelectronics
合作研究:DMREF:用于自组装量子光电子学的深度学习引导双电子学
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光电和微系统超精密加工(UPROAR)
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    EP/W024772/1
  • 财政年份:
    2023
  • 资助金额:
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应变稳定钙钛矿光电子学:从基础到器件
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