Nanoscale Optoelectronics with Polarization and Bandgap Engineered Nitride Nanowire/Silicon Heterostructures

具有偏振和带隙工程氮化物纳米线/硅异质结构的纳米级光电器件

• 批准号: 0907583
• 负责人: Debdeep Jena
• 金额: $ 30万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-07-01 至 2013-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0907583&HistoricalAwards=false
• 关键词: Nanoscale; Optoelectronics; Polarization; Bandgap; Engineered

Technical. This project addresses growth and optoelectronic properties of optically active III-V Nitride nanowire semiconductor heterostructures on silicon substrates. Based on the fundamental studies and combination of polarization and bandgap engineering, demonstration of ultraviolet and visible light emitters and detectors integrated with silicon substrates is expected. Nanowires will be grown without foreign metal catalyst particles, and the underlying silicon substrate will be used to tunnel-inject holes into the III-V nitride nanowires that are difficult to dope p-type with traditional acceptor dopants. Through the wide range of bandgaps viable with AlInGaN alloys, multicolor detectors and emitters will be grown and characterized. A major part of the pro-ject involves structures where the nanowires do not need to be broken off (or 'harvested'), but to exploit the intrinsic structure to develop applications that are not easily achievable either with III-V nitride thin films, or with silicon alone. These hybrid heterostructures provide advantages of dissimilar materials without the constraint of lattice-matching. Non-Technical. The project addresses fundamental research issues in a topical area of electronic/photonic materials science having technological relevance. The project will involve undergraduate students during the academic semesters as well as the summer. Theoretically oriented students will be involved in the project at the level of simulations of band diagrams and device structures. Experimentally inclined students will be involved at the level of fabrication of nanowire/silicon devices and their characterization. They will work directly with graduate students and the PIs by attending meetings and presenting their work. Depending on the results, the undergraduate students will be encouraged to publish their work. The project will result in the training of graduate students in a forefront area of nanoelectronics. Additional to expanding the existing outreach programs that the PIs are managing, two new activities are proposed with a special focus on under-represented groups: 1) experimental demonstration of nanoscale scanning probe techniques at the Expanding Your Horizon workshops where young school girls gather for their early exposure to how science and technology are employed in various careers, and 2) re-search projects designed for women undergraduate students under the Dual Degree Program at St. Mary's College. The dissemination of research results by publications and presentations at conferences, and its inclusion in courses taught by the investigators will ensure the outreach of the research proposed to the widest possible audience.

技术上的。该项目研究了光学活性III-V氮化物纳米线半导体异质结在硅衬底上的生长和光电特性。在理论研究和偏振与带隙工程相结合的基础上，展望了与硅衬底集成的紫外光和可见光发射器和探测器的演示。纳米线将在没有外来金属催化剂颗粒的情况下生长，底层的硅衬底将被用于在III-V氮化物纳米线中隧道注入空穴，这些空穴很难用传统的受主掺杂p型掺杂。通过AlInGaN合金可实现的广泛带隙，多色探测器和发射器将被生长和表征。该项目的一个主要部分涉及的结构中，纳米线不需要被折断(或“收获”)，而是利用内在结构来开发应用，而这些应用无论是使用III-V氮化物薄膜，还是单独使用硅都不容易实现。这些杂化异质结提供了不同材料的优点，而不受晶格匹配的限制。非技术性。该项目涉及具有技术相关性的电子/光子材料科学专题领域的基础研究问题。该项目将在学期和暑假期间吸引本科生参与。以理论为导向的学生将参与到带状图和器件结构模拟的项目中。倾向于实验的学生将参与纳米线/硅器件的制造及其表征的水平。他们将通过出席会议和介绍他们的工作，直接与研究生和私人投资经理合作。根据结果，将鼓励本科生发表他们的作品。该项目将培养纳米电子学前沿领域的研究生。除了扩大私人投资机构正在管理的现有外展计划外，还提议开展两项新活动，特别关注代表性不足的群体：1)在扩展你的地平线研讨会上进行纳米级扫描探头技术的实验演示，年轻的女学生聚集在一起，尽早接触到科学和技术是如何在各种职业中就业的；2)圣玛丽学院双学位计划下为女本科生设计的研究项目。通过出版物和在会议上的发言来传播研究成果，并将其纳入调查员讲授的课程，将确保将拟议的研究成果推广到尽可能广泛的受众。