Continuous Czochralski Growth of Silicon Single Crystals

一种连续固体进料直拉（CCZ）生长工艺， 将研究硅单晶。 通过减少熔体 高度并保持固定，这个过程可以抑制许多种 不稳定的动力学和不均匀性。 杂质的积累， 氧的掺入和轴向方向上的电阻率可以 通过连续地对多晶硅充电 和兴奋剂。 商业上可行的CCZ工艺的设计， 可以生产质量更好的晶体， 发展。 对流层的三维数值研究 涉及热量、质量和动量传递的传输过程 连同固体颗粒的熔化和在 熔体/晶体界面将被执行，以表征 适合于晶体连续生长的工艺参数。 流动可视化和传热的创新技术 实验将被用来发展一个基本的理解， 热流体动力学现象和颗粒熔化。 基于此 信息，在本发明的CZ晶体中的合适的修饰 研究了提拉法生长CCZ的最佳条件 将被定性。 全面的实验将在 在工业研究机构进行。 这一协作 大学和工业界之间的研究工作预计将 导致开发一种高效、具有成本效益的CCZ装置 这对美国来说非常重要 半导体行业。

A continuous solid-feed Czochralski (CCZ) growth process for silicon single crystals will be researched. By reducing the melt height and keeping it fixed, this process can suppress many kinds of unsteady kinetics and inhomogeneities. The impurity build-up, the oxygen incorporation and the resistivity in axial direction can be much better controlled by continuously charging the polysilicon and doping. The design of a commercially viable CCZ process which can produce crystals of much better quality and at lower costs will be developed. A three-dimensional numerical study of convective transport processes involving heat, mass and momentum transfer together with the melting of solid pellets and solidification at the melt/crystal interface will be performed to characterize the process parameters suitable for continuous growth of crystals. Innovative techniques for flow visualization and heat transfer experiments will be used to develop a basic understanding of thermohydrodynamic phenomena and pellets melting. Based on this information, suitable modifications in the present CZ crystal puller will be researched and the optimal conditions for CCZ growth will be characterized. Full-scale experiments will then be conducted at an industrial research facility. This collaborative research effort between the university and industry is expected to lead to the development of an efficient, cost-effective CCZ unit which should be of great importance to the United States semiconductor industry.