Tensile-Strained Semiconductor Quantum-Well Lasers

9302883安德森本项目的目的是对拉伸应变量子井异质结构激光器进行全面的实验和理论研究。重点将是系统地识别导致最近在这些类型的激光器中观察到的显著性能改进的物理机制，并将这些信息应用于高性能激光器设计。一组应变层激光样品，旨在借助作为这项工作的一部分而开发的应变层激光器的详细模型，阐明激光特性随特定量子阱的变化而变化的趋势。将包括外部施加的单轴压缩和拉伸应力的影响的研究。重要的是，这些研究将涵盖广泛的井宽和成分，从而跨越拉伸应变量子阱中可用的能带结构范围，并将强调通过理论和直接实验相结合的方法仔细隔离各种材料、应变和量子限制效应。最后，从这些研究中获得的信息将被应用于优化的低阈值拉伸应变激光器和具有独特的拉伸应变有源区的新结构的设计、制造和测试。具体焦点将放在InxGa1-xAs-InP和GaAsy-1-AlxGa1-xAs激光器上。***

9302883 Anderson The purpose of this project is the comprehensive experimental and theoretical examination of tensile-strained quantum-well-heterostructure lasers. Emphasis will be on the systematic identification of physical mechanisms responsible for the significant performance improvements recently observed in these types of lasers, and application of this information to high-performance laser design. Sets of strained-layer laser samples designed to elucidate trends in lasing properties with variations in specific quantum-well with the help of a detailed model of strained-layer lasers to be developed as part of this work. Investigations of the effects of externally applied compressive and tensile uniaxial stresses will be included. It is important that these studies will encompass wide ranges of well widths and compositions, thus spanning the range of band structure configurations available in tensile-strained quantum wells, and will emphasize careful isolation of various materials, strain, and quantum confinement effects through a combination of theoretical and direct experimental means. Finally, the information gained form these studies will be applied to the design, fabrication, and testing of optimized low-threshold tensile-strained lasers and new structures with unique tensile-strained active regions. Specific focus will be on InxGa1-xAs-InP and GaAsy-1-AlxGa1-xAs lasers. ***