Materials Growth and Processing Research for Wide-Bandgap Semiconductor Heterostructures and Devices

9312947将开展杜普伊斯研究，以加深对由AlGaInN四元及相关的三元和二元合金组成的系统中宽禁带III-V化合物半导体的常规和低温金属有机化学气相外延材料生长和新型器件加工技术的基本了解。采用低压金属有机化学气相沉积和流量调节低温外延生长两种方法生长晶格匹配和有意晶格失配的异质外延异质结。此外，本课程还将研究材料的基本结构、电子和光学性质，以及这些材料的异质结能带排列。%本课程的主要目标是对宽带隙半导体材料的外延生长、加工和性能有一个基本的了解，以便利用它们来实现各种先进的电子和光子器件。该研究计划与美国光电子产业研究和开发集团的直接合作努力密切相关。该计划的一个重要特点是在材料和工艺研究的基础和技术方面对研究生和本科生进行培训。这项研究将有助于提高用于计算、信息处理和电信的先进器件和集成电路的综合性能。***

9312947 Dupuis Research will be carried out to develop a fundamental understanding of conventional and low temperature metalorganic chemical vapor epitaxial materials growth and novel device processing techniques for wide-bandgap III-V compound semiconductors in the system consisting of the AlGaInN quaternary and related ternary and binary alloys. Lattice-matched and intentionally lattice-mismatched heteroepitaxial heterostructures will be grown in this materials system using both low-pressure metalorganic chemical vapor deposition, and low-temperature epitaxial growth by flow-rate modulation. In addition, this program will study the fundamental structural, electronic, and optical materials properties, as well as the heterojunction band alignments of these materials. %%% The primary goal of this program is to develop a fundamental-understanding of the epitaxial growth, processing, and properties of wide bandgap semiconductor materials so that they can be exploited in the realization of a variety of advanced electronic and photonic devices. This research program is strongly coupled to direct collaborative efforts with US optoelectronic industrial research and development groups. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***