A High Intensity Excimer UV Source for Semiconductor Manufacturing

9361115博耶斯这项研究的目标是探索开发一种高强度紫外准分子光源的可行性，以满足半导体制造和材料加工行业的苛刻要求。不需要相干光源的新兴加工技术，包括紫外线晶片清洗和光化学气相沉积，将需要在大范围内(100 mW/cm@)非常高的紫外线强度，目前只有准分子激光器才能提供。传统的紫外线灯不足以完成这项任务。准分子激光不能方便地照亮大范围的场地，通常难以集成到生产工具中，并且拥有成本非常高。第一阶段的研究将旨在确定开发具有所需性能的紫外准分子灯和激发源的可行性：1)将设计和制造灯和激发源。2)用纯Xe(172 Nm)测量光谱和紫外光效率。3)将编制初步的全尺寸设计和成本估算。第二阶段的研究将致力于构建一个可与ArF1*(193 Nm)、KRCL*(222 Nm)、KrF*(249 Nm)和XeCl*(351 Nm)等其他准分子气体混合物一起工作的全尺寸原型。如果成功，该计划将导致开发一种关键的制造资源，用于制造下一代半导体设备。***

9361115 Boyers The objective of this research is to explore the feasibility of developing a high intensity UV excimer source for the demanding requirements of the semiconductor manufacturing and materials processing industry. Emerging processing technologies not requiring a coherent source including UV wafer cleaning and photo CVD will require very high UV intensities over large areas (100mW/cm@) currently only available from excimer lasers. Conventional UV lamps are inadequate for the task. Excimer lasers cannot conveniently illuminate a large field size, are often difficult to integrate into a production tool, and have a very high cost of ownership. The phase I research will be directed toward establishing the feasibility of developing a UV excimer lamp and excitation source with the required performance : 1) A lamp and excitation source will be designed and fabricated. 2) The spectrum and UV efficiency will be measured with pure Xe (172 nm). 3) A preliminary full scale design and cost estimate will be prepared. The Phase II research will be directed toward the construction of a full scale prototype for operation with other excimer gas mixtures such as ArFl*(193 nm), KrCL* (222 nm), KrF* (249 nm), and XeCl* (351 nm). If successful, this program will lead to the development of a critical manufacturing resource for use in the fabrication of the next generation of semiconductor devices. ***