Studies of Surface Diffusion on Semiconductor Materials

本文用两种实验方法和分子动力学方法研究了Edmund Seebauer表面扩散。二次谐波显微镜(SHM)在研究IV族半导体低覆盖率表面扩散方面的应用已扩展到包括III-V和II-IV材料。这包括首次对离子增强的表面扩散进行定量测量。这项工作主要集中在宽带隙材料上，这种材料可能会对表面扩散表现出非常显著的离子效应。此外，还利用空间非分辨二次谐波产生实验验证了表面扩散系数与反应速率常数之间的联系。最初的实验涉及硅(111)上的氯。如果初步测试成功，计划在III-V或II-VI材料上扩展到卤素或氢。最后，对吸附原子对表面异质扩散的影响进行了分子动力学模拟。这是对表面扩散基本原理的基础研究。它具有广泛的潜在相关性，包括电子材料的加工、薄膜形成、多相催化和腐蚀保护。***

Abstract Edmund Seebauer Surface diffusion on semiconductors is examined in this study using two experimental approaches and molecular dynamics. The previously developed applications of second harmonic microscopy (SHM) for study of low-coverage surface diffusion in Group IV semiconductors is broadened to include III-V and II-IV materials. This includes the first quantitative measurements of ion-enhanced surface diffusion. The effort focusses on wide bandgap materials which may show very pronounced ionic effects on surface diffusion. In addition, spatially unresolved second harmonic generation is used to test the general theory connecting surface diffusivities with reaction rate constants. Initial experiments involve chlorine on silicon (111). Extension to halogens or hydrogen on III-V or II-VI materials is planned if initial tests succeed. Finally, molecular dynamics simulations of the influence of adatoms on surface heterodiffusion are performed. This is a basic study of the fundamentals of surface diffusion. It has a broad range of potential relevance, including the processing of electronic materials, thin-film formation, heterogeneous catalysis, and corrosion protection. ***