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Career: Si-Based Alloys an Heterostructures for Improved Performance

Career: Si-Based Alloys an Heterostructures for Improved Performance
职业生涯:硅基合金和异质结构可提高性能
批准号:
9624160
负责人:
Paul Berger
金额:
$24.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1996
资助国家:
美国
项目状态:
已结题
起止时间:
1996-08-01 至 2000-07-31

项目摘要

项目成果

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中文摘要
翻译
9624160 Berger本研究项目将研究和开发IV族合金系统(Si,Ge,C和Sn),研究Si1-x-y-zGexCySnz系统特有的材料特性,制造技术以及电子和光子器件。 特别注意力将集中在Si 1-x-yGexCx合金,因为它们固有的晶格匹配能力, Si衬底,但不限于这些合金。 Vegard定律预测Ge与C的8.2比1的比率将与Si衬底晶格匹配。 所获得的好处之一将是开发高性能的硅兼容异质结构电子器件以及具有增强的光学性能的硅基合金和异质结构。 该项目首先通过探测这些合金的光学,电子和结构特性来开发与这些合金相关的材料问题。 同时,该项目将开发蚀刻和金属化等加工技术,这可能是该材料系统所独有的。 优化的制造技术将应用于制造电子和光电器件和电路。 高性能的电子器件,如异质结双极晶体管(HBT)和调制掺杂场效应晶体管(MODFET)将非常适合于带隙工程可能与晶格匹配异质结构在Si衬底上的发展。 具有增强光子特性的器件,如光学探测器和发射器也将成为主要焦点。 除了上述研究计划外,教育计划将涉及四个主要重点。 这四个目标将是: 1. 吸引妇女、代表性不足的少数民族和残疾人参加 参与本科阶段的研究,以促进这些群体未来的教师; 2.通过为本科教学实验室建设实验演示和有竞争力的实验室资源,加强半导体材料和器件的本科课程; 3.开发一个新的硕士学位在电气工程互连技术; 4.为保留工程专业的学生建立一个支持结构。 ***
英文摘要
9624160 Berger This research project will examine and develop the Group IV alloy system (Si, Ge, C and Sn) studying material properties, fabrication techniques and electronic and photonic devices unique to the Si1-x-y-zGexCySnz system. Special attention will be focused on Si1-x-yGexCx alloys due to their inherent lattice matching ability to Si substrates, but not be limited to these alloys. Vegard's law predicts that an 8.2 to 1 ratio of Ge to C will be lattice matched to Si substrates. Among the benefits gained would be development of high performance Si-compatible heterostructure electronics as well as Si-based alloys and heterostructures with enhanced optical properties. The project commences with development of material issues related to these alloys by probing their optical, electronic and structural properties. Concurrently, the project will develop processing techniques such as etching and metalization, which could be unique to this material system. Optimized fabrication techniques will be applied to manufacture electronic and optoelectronic devices and circuits. High performance electronic devices such as heterojunction bipolar transistors (HBT) and modulation-doped field effect transistors (MODFET) would be ideally suited to the bandgap engineering possible with development of lattice matched heterstructure on Si substrates. Devices with enhanced photonic properties such as optical detectors and emitters will also be a primary focus. In addition to the research plan outlined above, and educational plan will involve four main thrusts. These four goals will be: 1. to attract women, under-represented minorities and persons with disabilities to get involved in research at the undergraduate level in order to promote future teachers from these groups; 2. to strengthen the undergraduate curriculum on semiconductor materials and devices by building lab demonstrations and competitive lab resources for the undergraduate teaching lab; 3. to develop a new M aster's degree in Electrical Engineering on Interconnect Technology; 4. to build a support structure for the retention engineering majors. ***
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