Interaction of Ge with Surfactants on the Si(100) Surface

9701091 Seiberling这个项目的目的是更大的基础材料科学的理解周围的表面介导外延的问题。 例如，Sn和Sb是对膜生长具有相反影响的表面活性剂，但是在化学键合的基础上不理解差异。本文提出了Sn和Sb在Si（100）上的微观成键排列以及它们与生长中的Ge膜的相互作用。 传输离子通道，它可以确定的表面上的原子的键合位点的分辨率优于0.01 nm，将被用来遵循的表面活性剂和Ge原子的位置从初始键合位点，与表面活性剂层的顶部上的Ge，通过表面活性剂/吸附原子交换，最终导致最终的状态。 该项目解决了材料科学前沿研究领域的问题。该研究将在基本层面上为电子/光子器件和集成电路的重要方面提供基本的材料科学知识。 此外，从研究中获得的基础知识和理解有望通过提供设计和生产改进材料和材料组合的基本理解和基础，有助于提高先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

9701091 Seiberling This project aims for greater fundamental materials science understanding of issues surrounding surfactant-mediated epitaxy. For example, Sn and Sb are surfactants that have opposite influences on film growth, but the difference is not understand on the basis of chemical bonding. This proposal address the microscopic bonding arrangement of Sn and Sb on Si(100) and their interaction with a growing Ge film. Transmission ion channeling, which can determine the bonding sites of atoms on a surface with a resolution of better than 0.01 nm, will be used to follow the positions of the surfactant and Ge atoms from the initial bonding site, with Ge on top of the surfactant layer, through the surfactant/adatom exchange, leading eventually to the final state. %%% The project addresses issues in a forefront research area of materials science. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry, in general. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***