Diffusion Studies and Defect Spectroscopy with Isotopically Controlled Semiconductors

这个凝聚态物理项目使用分离的同位素来研究平衡和非平衡条件下的自扩散。此外，局部振动模式光谱学将用于研究低原子质量杂质。(a)镓在铝-镓-砷异质结构中的自扩散常数，(b)硅薄膜中的硅，以及(c)锑化镓异质结构中的镓和锑的自扩散常数将从二次离子质谱谱中得到。研究了扩散常数的温度、合金成分和掺杂依赖关系。这些数据对于了解固体中的基本质量输运和开发半导体中扩散的综合模型至关重要。未来的设备加工模型有望直接从这些定量结果中获利。振动模光谱实验旨在提供有关半导体缺陷结构、晶格动力学和缺陷位置原子排列的信息。这项工作为培养高级技术和基础物理方面的研究生提供了一个有价值的舞台。这个凝聚态物理项目使用分离的同位素来研究平衡和非平衡条件下的自扩散。此外，局部振动模式光谱学将用于研究低原子质量杂质。(1)镓在铝-镓-砷异质结构中的自扩散常数，(2)硅薄膜中的硅，以及(3)镓和锑化镓异质结构中的自扩散常数将由二次离子质谱谱得到。研究了扩散常数的温度、合金成分和掺杂依赖关系。这些数据对于了解固体中的基本质量输运和开发半导体中扩散的综合模型至关重要。未来的设备加工模型有望直接从这些定量结果中获利。振动模光谱实验旨在提供有关半导体缺陷结构、晶格动力学和缺陷位置原子排列的信息。这项工作为培养高级技术和基础物理方面的研究生提供了一个有价值的舞台。＊＊＊

9732707 Haller This condensed matter physics project uses separated isotopes to investigate self-diffusion under equilibrium and non-equilibrium conditions. In addition, local vibrational mode spectroscopy will be used to investigate low atomic mass impurities. The self-diffusion constants of (a) gallium in aluminum-gallium-arsenic heterostructures, (b) silicon in silicon epilayers, and (c) gallium and antimony in gallium antimonide heterostructures will be derived from secondary ion mass spectroscopy profiles. The temperature, alloy composition and doping dependencies of the diffusion constants will be investigated. These data are critical for the basic understanding of fundamental mass transport in solids and for development of a comprehensive model of diffusion in semiconductors. Future device processing models are expected to profit directly from these quantitative results. The vibrational mode spectroscopy experiments are designed to provide information about defect structures, lattice dynamics and atomic arrangements at defect sites in semiconductors. The work provides a valuable arena for training graduate students in both advanced technology and fundamental physics. %%% This condensed matter physics project uses separated isotopes to investigate self-diffusion under equilibrium and non-equilibrium conditions. In addition, local vibrational mode spectroscopy will be used to investigate low atomic mass impurities. The self-diffusion constants of (1) gallium in aluminum-gallium-arsenic heterostructures, (2) silicon in silicon epilayers, and (3) gallium and antimony in gallium antimonide heterostructures will be derived from secondary ion mass spectroscopy profiles. The temperature, alloy composition and doping dependencies of the diffusion constants will be investigated. These data are critical for the basic understanding of fundamental mass transport in solids and for development of a comprehensive model of diffusion in semiconductors. Future device processing models are expected to profit directly from these quantitative results. The vibrational mode spectroscopy experiments are designed to provide information about defect structures, lattice dynamics and atomic arrangements at defect sites in semiconductors. The work provides a valuable arena for training graduate students in both advanced technology and fundamental physics. ***