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Fundamental Implantation, Epitaxy and Defect studies in Silicon to support ultra-shallow junction formation

Fundamental Implantation, Epitaxy and Defect studies in Silicon to support ultra-shallow junction formation
硅中的基本注入、外延和缺陷研究,以支持超浅结的形成
批准号:
DP0663445
负责人:
Prof James Williams
金额:
$30.07万
依托单位国家:
澳大利亚
项目类别:
Discovery Projects
财政年份:
2006
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2006-04-07 至 2009-08-31

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中文摘要
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英文摘要
If successful this project will provide key data and understanding that are fundamentally important for semiconductor science and technologically essential for the global semiconductor industry. Hence successful outcomes will benefit the Nation by raising the international profile of Australian science in these areas. More direct benefit will be derived from the two Australian ventures that require successful implementation of ultra-shallow junction formation. One is the new silicon phase-change memory company, WRiota, that requires ultra-shallow silicon layers. The second is the quantum computing initiatives in silicon, where understanding of defect-mediated processes in shallow implanted layers is essential to the technology.
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