Fundamental Implantation, Epitaxy and Defect studies in Silicon to support ultra-shallow junction formation

硅中的基本注入、外延和缺陷研究，以支持超浅结的形成

• 批准号: DP0663445
• 负责人: Prof James Williams
• 金额: $ 30.07万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2006
• 资助国家: 澳大利亚
• 起止时间: 2006-04-07 至 2009-08-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP0663445
• 关键词: Fundamental; Implantation; Epitaxy; Defect; studies

If successful this project will provide key data and understanding that are fundamentally important for semiconductor science and technologically essential for the global semiconductor industry. Hence successful outcomes will benefit the Nation by raising the international profile of Australian science in these areas. More direct benefit will be derived from the two Australian ventures that require successful implementation of ultra-shallow junction formation. One is the new silicon phase-change memory company, WRiota, that requires ultra-shallow silicon layers. The second is the quantum computing initiatives in silicon, where understanding of defect-mediated processes in shallow implanted layers is essential to the technology.

如果成功，该项目将提供对半导体科学至关重要的关键数据和对全球半导体行业至关重要的技术理解。 因此，成功的结果将通过提高澳大利亚科学在这些领域的国际形象而使国家受益。 更直接的好处将来自两个需要成功实施超浅结形成的澳大利亚企业。 一个是新的硅相变存储器公司WRiota，它需要超浅的硅层。 第二个是硅中的量子计算计划，其中理解浅注入层中的缺陷介导过程对该技术至关重要。