课题基金 / 基金详情

Atomic Layer Epitaxy of Superconducting Oxides and Heterostructures

Atomic Layer Epitaxy of Superconducting Oxides and Heterostructures
超导氧化物和异质结构的原子层外延
批准号:
9807042
负责人:
Robert Chang
金额:
$33.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-07-15 至 2001-06-30

项目摘要

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中文摘要
翻译
该奖项颁发给西北大学,以支持化学系先进材料计划、材料科学系固体化学计划和电气与通信系统系使能技术物理基础计划对张荣平教授和托宾·马克斯教授的合作研究。研究的重点将是利用原子层外延生长金属氧化物超导体/绝缘体薄膜异质结。有机金属前驱体将被设计和合成,以提供连续的自密封无针孔薄膜。脉冲金属有机束外延将被用于在绝缘体(SIS)或正常金属氧化物(SNS)异质结上制备CuO超导氧化物超晶格。在各种实验条件下。扫描电子显微镜、扫描隧道显微镜、原子力显微镜、离子散射谱、X射线衍射和俄歇能谱将用于表征薄膜和界面。与几家公司合作制造和表征连接器件已经到位。基于多层高温超导体的异质结器件是当前微波电路研究的热点。本研究提供的对超导薄膜成分、形貌和外延的精确控制将提高这类器件的性能。
英文摘要
This award is made to Northwestern University in support of the collaborative research of Prof. R.P.H. Chang and Prof. Tobin Marks by the Advanced Materials Program in the Chemistry Division, The Solid-State Chemistry Program in the Division of Materials Science and the Physical Foundations of Enabling Technology Program in the Division of Electrical and Communication Systems. The focus of the research will be the growth of metal oxide superconductor/insulator thin film heterostructures using atomic layer epitaxy. Organometallic precursors will be designed and synthesized to provide contiguous self sealing pinhole-free films. Pulsed organometallic beam epitaxy will be used to fabricate cuprate superconducting oxide superlattices on insulator(SIS) or normal metal oxide(SNS) heterostructure junctions. under a variety of experimental conditions. Scanning electron microscopy, scanning tunneling microscopy, atomic force microscopy, ion scattering spectroscopy, x-ray diffraction and Auger spectroscopy will be used to characterize the films and interfaces. Collaborations with several companies to fabricate and characterize junction devices are in place. Multilayer high temperature superconductor-based heterostructure junction devices are of current interest for microwave circuitry. The precise control of superconducting thin film composition, morphology and epitaxy provided by this research will enhance the performance of such devices.
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